Inventor
LARSON WILLIAM L
US18 patents
⚠️ This page may combine multiple inventors who share the name “LARSON WILLIAM L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
10 patentsUS6424561B1Jul 23, 2002
MRAM architecture using offset bits for increased write selectivity
MICRON TECHNOLOGY INC56 citations96
US6392922B1May 21, 2002
Passivated magneto-resistive bit structure and passivation method therefor
MICRON TECHNOLOGY INC59 citations96
US6806546B2Oct 19, 2004
Passivated magneto-resistive bit structure
MICRON TECHNOLOGY INC30 citations92
US6522574B2Feb 18, 2003
MRAM architectures for increased write selectivity
MICRON TECHNOLOGY INC13 citations92
US6424564B2Jul 23, 2002
MRAM architectures for increased write selectivity
MICRON TECHNOLOGY INC11 citations82
US6992918B2Jan 31, 2006
Methods of increasing write selectivity in an MRAM
MICRON TECHNOLOGY INC3 citations73
US6791856B2Sep 14, 2004
Methods of increasing write selectivity in an MRAM
MICRON TECHNOLOGY INC4 citations73
US6623987B2Sep 23, 2003
Passivated magneto-resistive bit structure and passivation method therefor
MICRON TECHNOLOGY INC6 citations73
US7427514B2Sep 23, 2008
Passivated magneto-resistive bit structure and passivation method therefor
MICRON TECHNOLOGY INC0 citations52
US6756240B2Jun 29, 2004
Methods of increasing write selectivity in an MRAM
MICRON TECHNOLOGY INC0 citations52
RAMTRON INT CORP
3 patentsUS5580814ADec 3, 1996
Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor
RAMTRON INT CORP89 citations96
US5495117AFeb 27, 1996
Stacked ferroelectric memory cell
RAMTRON INT CORP53 citations96
US5371699ADec 6, 1994
Non-volatile ferroelectric memory with folded bit lines and method of making the same
RAMTRON INT CORP40 citations92