Inventor
HIRONAKA KATSUYUKI
JP11 patents
Patents
11 patentsUS6544857B1Apr 8, 2003
Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
SONY CORP20 citations92
US6004392ADec 21, 1999
Ferroelectric capacitor and manufacturing the same using bismuth layered oxides
SONY CORP32 citations92
US6114199ASep 5, 2000
Manufacturing method for ferroelectric film and nonvolatile memory using the same
SONY CORP31 citations89
US6043561AMar 28, 2000
Electronic material, its manufacturing method, dielectric capacitor, non-volatile memory and semiconductor device
SONY CORP15 citations73
US5976624ANov 2, 1999
Process for producing bismuth compounds, and bismuth compounds
SONY CORP2 citations62
US5935549AAug 10, 1999
Method of producing bismuth layered compound
SONY CORP3 citations62
US7160614B2Jan 9, 2007
Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles
SONY CORP2 citations61
US7306751B2Dec 11, 2007
Crystalline superfine particles, complex material, method of manufacturing crystalline superfine particles, inverted micelles, inverted micelles enveloping precursor superfine particles, inverted micelles enveloping crystalline superfine particles, and precursor superfine particles
SONY CORP0 citations51
US6995069B2Feb 7, 2006
Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
SONY CORP0 citations51
US6251360B1Jun 26, 2001
Method of producing bismuth layered compound
SONY CORP0 citations51
US5904766AMay 18, 1999
Process for preparing bismuth compounds
SONY CORP0 citations51