Inventor

ANDREAS MICHAEL T

US42 patents

Patents

42 patents

US5895550AApr 20, 1999

Ultrasonic processing of chemical mechanical polishing slurries

MICRON TECHNOLOGY INC175 citations99

US6265781B1Jul 24, 2001

Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods

MICRON TECHNOLOGY INC92 citations98

US5855811AJan 5, 1999

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

MICRON TECHNOLOGY INC138 citations98

US6375548B1Apr 23, 2002

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

MICRON TECHNOLOGY INC39 citations95

US6044851AApr 4, 2000

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

MICRON TECHNOLOGY INC86 citations95

US9653307B1May 16, 2017

Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures

MICRON TECHNOLOGY INC23 citations93

US6269511B1Aug 7, 2001

Surface cleaning apparatus

MICRON TECHNOLOGY INC38 citations93

US5963814AOct 5, 1999

Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer

MICRON TECHNOLOGY INC44 citations93

US6787473B2Sep 7, 2004

Post-planarization clean-up

MICRON TECHNOLOGY INC33 citations92

US6635562B2Oct 21, 2003

Methods and solutions for cleaning polished aluminum-containing layers

MICRON TECHNOLOGY INC21 citations92

US6589882B2Jul 8, 2003

Copper post-etch cleaning process

MICRON TECHNOLOGY INC26 citations92

US6358325B1Mar 19, 2002

Polysilicon-silicon dioxide cleaning process performed in an integrated cleaner with scrubber

MICRON TECHNOLOGY INC44 citations92

US6399492B1Jun 4, 2002

Ruthenium silicide processing methods

MICRON TECHNOLOGY INC18 citations84

US7468105B2Dec 23, 2008

CMP cleaning composition with microbial inhibitor

MICRON TECHNOLOGY INC7 citations74

US7235494B2Jun 26, 2007

CMP cleaning composition with microbial inhibitor

MICRON TECHNOLOGY INC6 citations74

US7033978B2Apr 25, 2006

Post-planarization clean-up

MICRON TECHNOLOGY INC5 citations74

US6936540B2Aug 30, 2005

Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings

MICRON TECHNOLOGY INC10 citations74

US6930017B2Aug 16, 2005

Wafer Cleaning method and resulting wafer

MICRON TECHNOLOGY INC8 citations74

US6835668B2Dec 28, 2004

Copper post-etch cleaning process

MICRON TECHNOLOGY INC10 citations74

US6835121B2Dec 28, 2004

Chemical-mechanical polishing methods

MICRON TECHNOLOGY INC8 citations74

US6627550B2Sep 30, 2003

Post-planarization clean-up

MICRON TECHNOLOGY INC9 citations74

US6387812B1May 14, 2002

Ultrasonic processing of chemical mechanical polishing slurries

MICRON TECHNOLOGY INC10 citations74

US10916418B2Feb 9, 2021

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC2 citations71

US10497558B2Dec 3, 2019

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC3 citations71

US8025809B2Sep 27, 2011

Polishing methods

MICRON TECHNOLOGY INC2 citations63

US7402259B2Jul 22, 2008

Chemical-mechanical polishing methods

MICRON TECHNOLOGY INC2 citations63

US7066790B2Jun 27, 2006

Chemical-mechanical polishing methods

MICRON TECHNOLOGY INC1 citations63

US6936534B2Aug 30, 2005

Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization

MICRON TECHNOLOGY INC2 citations63

US6908569B2Jun 21, 2005

Ruthenium silicide wet etch

MICRON TECHNOLOGY INC1 citations63

US6740252B2May 25, 2004

Ruthenium silicide wet etch

MICRON TECHNOLOGY INC2 citations63

US6613674B1Sep 2, 2003

Semiconductor processing methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitry

MICRON TECHNOLOGY INC2 citations63

US6498110B2Dec 24, 2002

Ruthenium silicide wet etch

MICRON TECHNOLOGY INC1 citations63

US11651952B2May 16, 2023

Using sacrificial polymer materials in semiconductor processing

MICRON TECHNOLOGY INC0 citations60

US7964109B2Jun 21, 2011

Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution

MICRON TECHNOLOGY INC0 citations52

US7367343B2May 6, 2008

Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution

MICRON TECHNOLOGY INC0 citations52

US7151026B2Dec 19, 2006

Semiconductor processing methods

MICRON TECHNOLOGY INC0 citations52

US7023099B2Apr 4, 2006

Wafer cleaning method and resulting wafer

MICRON TECHNOLOGY INC0 citations52

US7014537B2Mar 21, 2006

Method of processing a semiconductor substrate

MICRON TECHNOLOGY INC1 citations52

US6972227B2Dec 6, 2005

Semiconductor processing methods, and methods of forming a dynamic random access memory (DRAM) storage capacitor

MICRON TECHNOLOGY INC0 citations52

ANDREAS MICHAEL T

Patents

Ultrasonic processing of chemical mechanical polishing slurries

Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

Chemical-mechanical polishing methods

Surface cleaning apparatus and method

Ultrasonic processing of chemical mechanical polishing slurries

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication

Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structures

Surface cleaning apparatus

Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer

Post-planarization clean-up

Methods and solutions for cleaning polished aluminum-containing layers

Copper post-etch cleaning process

Polysilicon-silicon dioxide cleaning process performed in an integrated cleaner with scrubber

Ruthenium silicide processing methods

CMP cleaning composition with microbial inhibitor

CMP cleaning composition with microbial inhibitor

Post-planarization clean-up

Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markings

Wafer Cleaning method and resulting wafer

Copper post-etch cleaning process

Chemical-mechanical polishing methods

Post-planarization clean-up

Ultrasonic processing of chemical mechanical polishing slurries

Using sacrificial polymer materials in semiconductor processing

Using sacrificial polymer materials in semiconductor processing

Polishing methods

Chemical-mechanical polishing methods

Chemical-mechanical polishing methods

Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization

Ruthenium silicide wet etch

Ruthenium silicide wet etch

Semiconductor processing methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitry

Ruthenium silicide wet etch

Using sacrificial polymer materials in semiconductor processing

Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution

Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution

Semiconductor processing methods

Wafer cleaning method and resulting wafer

Method of processing a semiconductor substrate

Semiconductor processing methods, and methods of forming a dynamic random access memory (DRAM) storage capacitor