Inventor
OWADA TAMOTSU
JP27 patents
⚠️ This page may combine multiple inventors who share the name “OWADA TAMOTSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU SEMICONDUCTOR LTD
11 patentsUS8778814B2Jul 15, 2014
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD20 citations92
US9087873B2Jul 21, 2015
Semiconductor device manufacturing method
FUJITSU SEMICONDUCTOR LTD12 citations84
US8349722B2Jan 8, 2013
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD6 citations83
US7763509B2Jul 27, 2010
Method of manufacturing semiconductor device including forming two stress films and irradiation of one stress film
FUJITSU SEMICONDUCTOR LTD7 citations72
US7928476B2Apr 19, 2011
Semiconductor device and method of manufacturing the same
FUJITSU SEMICONDUCTOR LTD3 citations63
US8026164B2Sep 27, 2011
Semiconductor device and method of manufacturing the same
FUJITSU SEMICONDUCTOR LTD5 citations61
US7749897B2Jul 6, 2010
Method of manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD5 citations59
US8883613B2Nov 11, 2014
Manufacturing method of semiconductor device, processing method of semiconductor wafer, semiconductor wafer
FUJITSU SEMICONDUCTOR LTD1 citations52
US9123728B2Sep 1, 2015
Semiconductor device and method for manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations51
US9236302B2Jan 12, 2016
Semiconductor device and manufacturing method of semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations38
US8916423B2Dec 23, 2014
Semiconductor device and method of manufacturing the same
FUJITSU SEMICONDUCTOR LTD0 citations38
FUJITSU LTD
10 patentsUS6613834B2Sep 2, 2003
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD51 citations96
US6949830B2Sep 27, 2005
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD45 citations95
US6958525B2Oct 25, 2005
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD17 citations92
US5349155ASep 20, 1994
Insulating material for wiring substrate and method of producing multi-layered wiring substrate
FUJITSU LTD22 citations92
US5386430AJan 31, 1995
Excimer laser processing method and apparatus
FUJITSU LTD46 citations89
US7485570B2Feb 3, 2009
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD8 citations83
US6943431B2Sep 13, 2005
Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
FUJITSU LTD6 citations71
US7235866B2Jun 26, 2007
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD2 citations63
US7208405B2Apr 24, 2007
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU LTD4 citations63
US7256118B2Aug 14, 2007
Semiconductor device using low-K material as interlayer insulating film and its manufacture method
FUJITSU LTD0 citations52
FUJITSU MICROELECTRONICS LTD
3 patentsUS7642185B2Jan 5, 2010
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU MICROELECTRONICS LTD8 citations84
US7579277B2Aug 25, 2009
Semiconductor device and method for fabricating the same
FUJITSU MICROELECTRONICS LTD6 citations62
US7541296B2Jun 2, 2009
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
FUJITSU MICROELECTRONICS LTD0 citations52