Inventor
WATATANI HIROFUMI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “WATATANI HIROFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
17 patentsUS6153511ANov 28, 2000
Semiconductor device having a multilayered interconnection structure
FUJITSU LTD75 citations96
US6949830B2Sep 27, 2005
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD45 citations95
US5620526AApr 15, 1997
In-situ cleaning of plasma treatment chamber
FUJITSU LTD69 citations94
US6707156B2Mar 16, 2004
Semiconductor device with multilevel wiring layers
FUJITSU LTD44 citations92
US6602748B2Aug 5, 2003
Method for fabricating a semiconductor device
FUJITSU LTD26 citations92
US5905298AMay 18, 1999
Semiconductor device having an insulation film of low permittivity and a fabrication process thereof
FUJITSU LTD26 citations92
US7485570B2Feb 3, 2009
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD8 citations83
US7001847B2Feb 21, 2006
Micro pattern forming method and semiconductor device manufacturing method
FUJITSU LTD8 citations74
US6632739B2Oct 14, 2003
Method for fabricating a semiconductor device
FUJITSU LTD7 citations74
US6514878B2Feb 4, 2003
Method of fabricating a semiconductor device having a multilayered interconnection structure
FUJITSU LTD10 citations74
US6337519B1Jan 8, 2002
Semiconductor device having a multilayered interconnection structure
FUJITSU LTD6 citations74
US7701016B2Apr 20, 2010
Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method
FUJITSU LTD7 citations72
US7208405B2Apr 24, 2007
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU LTD4 citations63
US6605510B2Aug 12, 2003
Semiconductor device with both memories and logic circuits and its manufacture
FUJITSU LTD3 citations63
US6483150B1Nov 19, 2002
Semiconductor device with both memories and logic circuits and its manufacture
FUJITSU LTD2 citations63
US7951686B2May 31, 2011
Method of manufacturing semiconductor device having device characteristics improved by straining surface of active region
FUJITSU LTD4 citations61
US6852587B2Feb 8, 2005
Method for fabricating a semiconductor device
FUJITSU LTD0 citations52
FUJITSU SEMICONDUCTOR LTD
5 patentsUS8778814B2Jul 15, 2014
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD20 citations92
US8349722B2Jan 8, 2013
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD6 citations83
US8030207B2Oct 4, 2011
Method of manufacturing a semiconductor device and semiconductor device
FUJITSU SEMICONDUCTOR LTD1 citations62
US7749897B2Jul 6, 2010
Method of manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD5 citations59
US9123728B2Sep 1, 2015
Semiconductor device and method for manufacturing semiconductor device
FUJITSU SEMICONDUCTOR LTD0 citations51
SANDISK TECHNOLOGIES INC
3 patentsUS9437606B2Sep 6, 2016
Method of making a three-dimensional memory array with etch stop
SANDISK TECHNOLOGIES INC38 citations94
US9099496B2Aug 4, 2015
Method of forming an active area with floating gate negative offset profile in FG NAND memory
SANDISK TECHNOLOGIES INC31 citations94
US9093480B2Jul 28, 2015
Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device
SANDISK TECHNOLOGIES INC16 citations84
FUJITSU MICROELECTRONICS LTD
2 patentsUS7642185B2Jan 5, 2010
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU MICROELECTRONICS LTD8 citations84
US7541296B2Jun 2, 2009
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
FUJITSU MICROELECTRONICS LTD0 citations52