Inventor
FUKUYAMA SHUN-ICHI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “FUKUYAMA SHUN-ICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
21 patentsUS6613834B2Sep 2, 2003
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD51 citations96
US4988514AJan 29, 1991
Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
FUJITSU LTD58 citations96
US4670299AJun 2, 1987
Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
FUJITSU LTD87 citations96
US4657843AApr 14, 1987
Use of polysilsesquioxane without hydroxyl group for forming mask
FUJITSU LTD62 citations96
US6949830B2Sep 27, 2005
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD45 citations95
US5770260AJun 23, 1998
Process for forming silicon dioxide film
FUJITSU LTD63 citations95
US6958525B2Oct 25, 2005
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD17 citations92
US6707156B2Mar 16, 2004
Semiconductor device with multilevel wiring layers
FUJITSU LTD44 citations92
US5976618ANov 2, 1999
Process for forming silicon dioxide film
FUJITSU LTD37 citations92
US5949130ASep 7, 1999
Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant
FUJITSU LTD20 citations92
US5240813AAug 31, 1993
Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
FUJITSU LTD27 citations92
US4863833ASep 5, 1989
Pattern-forming material and its production and use
FUJITSU LTD34 citations92
US6737744B2May 18, 2004
Semiconductor device including porous insulating material and manufacturing method therefor
FUJITSU LTD15 citations84
US6693046B2Feb 17, 2004
Method of manufacturing semiconductor device having multilevel wiring
FUJITSU LTD17 citations84
US7485570B2Feb 3, 2009
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU LTD8 citations83
US5484687AJan 16, 1996
Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
FUJITSU LTD10 citations73
US6943431B2Sep 13, 2005
Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
FUJITSU LTD6 citations71
US7235866B2Jun 26, 2007
Low dielectric constant film material, film and semiconductor device using such material
FUJITSU LTD2 citations63
US7208405B2Apr 24, 2007
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU LTD4 citations63
US7060909B2Jun 13, 2006
Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby
FUJITSU LTD4 citations63
US7256118B2Aug 14, 2007
Semiconductor device using low-K material as interlayer insulating film and its manufacture method
FUJITSU LTD0 citations52
FUJITSU MICROELECTRONICS LTD
3 patentsUS7642185B2Jan 5, 2010
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device
FUJITSU MICROELECTRONICS LTD8 citations84
US7579277B2Aug 25, 2009
Semiconductor device and method for fabricating the same
FUJITSU MICROELECTRONICS LTD6 citations62
US7541296B2Jun 2, 2009
Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device
FUJITSU MICROELECTRONICS LTD0 citations52
FUJITSU SEMICONDUCTOR LTD
2 patentsUS8778814B2Jul 15, 2014
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD20 citations92
US8349722B2Jan 8, 2013
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
FUJITSU SEMICONDUCTOR LTD6 citations83