Inventor
AHN YOUNG JOON
KR34 patents
⚠️ This page may combine multiple inventors who share the name “AHN YOUNG JOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG ELECTRONICS INC
16 patentsUS6608447B2Aug 19, 2003
Plasma display panel and driving method thereof
LG ELECTRONICS INC9 citations74
US6680573B1Jan 20, 2004
Plasma display panel with improved illuminance
LG ELECTRONICS INC10 citations73
US7133005B2Nov 7, 2006
Plasma display panel and method and apparatus for driving the same
LG ELECTRONICS INC5 citations72
US7034443B2Apr 25, 2006
Plasma display panel
LG ELECTRONICS INC9 citations72
US6768262B2Jul 27, 2004
Plasma display panel
LG ELECTRONICS INC6 citations63
US6734627B2May 11, 2004
Plasma display panel
LG ELECTRONICS INC4 citations63
US6667581B2Dec 23, 2003
Plasma display panel
LG ELECTRONICS INC3 citations63
US6541914B1Apr 1, 2003
Plasma display panel including grooves in phosphor
LG ELECTRONICS INC5 citations63
US7071622B2Jul 4, 2006
Plasma display panel
LG ELECTRONICS INC4 citations62
US6819307B2Nov 16, 2004
Plasma display panel and driving method thereof
LG ELECTRONICS INC2 citations62
US7576491B2Aug 18, 2009
Plasma display panel having buffer layer between sealing layer and substrate and method of fabricating the same
LG ELECTRONICS INC0 citations52
US7385351B2Jun 10, 2008
Plasma display panel having a sealing layer and method of fabricating the same
LG ELECTRONICS INC0 citations52
US6847166B2Jan 25, 2005
Plasma display panel with improved brightness and color purity
LG ELECTRONICS INC0 citations52
US7514870B2Apr 7, 2009
Plasma display panel having first and second electrode groups
LG ELECTRONICS INC0 citations51
US7352129B2Apr 1, 2008
Plasma display panel
LG ELECTRONICS INC0 citations51
US7667404B2Feb 23, 2010
Plasma display apparatus
LG ELECTRONICS INC0 citations42
SAMSUNG ELECTRONICS CO LTD
13 patentsUS7358142B2Apr 15, 2008
Method for forming a FinFET by a damascene process
SAMSUNG ELECTRONICS CO LTD29 citations92
US7804137B2Sep 28, 2010
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7566619B2Jul 28, 2009
Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
SAMSUNG ELECTRONICS CO LTD12 citations84
US7528022B2May 5, 2009
Method of forming fin field effect transistor using damascene process
SAMSUNG ELECTRONICS CO LTD11 citations84
US7329581B2Feb 12, 2008
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7166514B2Jan 23, 2007
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7560759B2Jul 14, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US7674661B2Mar 9, 2010
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7384850B2Jun 10, 2008
Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions therein
SAMSUNG ELECTRONICS CO LTD5 citations63
US7410853B2Aug 12, 2008
Method of forming a nanowire and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8055220B2Nov 8, 2011
Broadcast receiver for and method of providing broadcast channel information
SAMSUNG ELECTRONICS CO LTD0 citations49
US10630809B2Apr 21, 2020
Information processing apparatus, image processing apparatus and control methods thereof
SAMSUNG ELECTRONICS CO LTD0 citations42
US7760764B2Jul 20, 2010
Digital broadcast receiving apparatus and method of reducing output time of broadcast content
SAMSUNG ELECTRONICS CO LTD0 citations41