Inventor
HOLLAND JOHN P
US29 patents
⚠️ This page may combine multiple inventors who share the name “HOLLAND JOHN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
17 patentsUS7264688B1Sep 4, 2007
Plasma reactor apparatus with independent capacitive and toroidal plasma sources
APPLIED MATERIALS INC73 citations97
US6962644B2Nov 8, 2005
Tandem etch chamber plasma processing system
APPLIED MATERIALS INC108 citations97
US6472822B1Oct 29, 2002
Pulsed RF power delivery for plasma processing
APPLIED MATERIALS INC178 citations97
US8349128B2Jan 8, 2013
Method and apparatus for stable plasma processing
APPLIED MATERIALS INC26 citations92
US7837838B2Nov 23, 2010
Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
APPLIED MATERIALS INC20 citations92
US7780864B2Aug 24, 2010
Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
APPLIED MATERIALS INC21 citations92
US7777152B2Aug 17, 2010
High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
APPLIED MATERIALS INC26 citations92
US7645357B2Jan 12, 2010
Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
APPLIED MATERIALS INC40 citations92
US7431857B2Oct 7, 2008
Plasma generation and control using a dual frequency RF source
APPLIED MATERIALS INC26 citations90
US7674394B2Mar 9, 2010
Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
APPLIED MATERIALS INC17 citations84
US7510665B2Mar 31, 2009
Plasma generation and control using dual frequency RF signals
APPLIED MATERIALS INC17 citations84
US7645710B2Jan 12, 2010
Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
APPLIED MATERIALS INC13 citations83
US8801896B2Aug 12, 2014
Method and apparatus for stable plasma processing
APPLIED MATERIALS INC4 citations73
US7678710B2Mar 16, 2010
Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
APPLIED MATERIALS INC7 citations72
US7695633B2Apr 13, 2010
Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
APPLIED MATERIALS INC2 citations63
US7727413B2Jun 1, 2010
Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
APPLIED MATERIALS INC5 citations62
US7648914B2Jan 19, 2010
Method for etching having a controlled distribution of process results
APPLIED MATERIALS INC6 citations60
LAM RES CORP
9 patentsUS6125025ASep 26, 2000
Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
LAM RES CORP158 citations99
US6265831B1Jul 24, 2001
Plasma processing method and apparatus with control of rf bias
LAM RES CORP78 citations96
US6280563B1Aug 28, 2001
Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
LAM RES CORP101 citations95
US6229264B1May 8, 2001
Plasma processor with coil having variable rf coupling
LAM RES CORP85 citations94
US6790375B1Sep 14, 2004
Dechucking method and apparatus for workpieces in vacuum processors
LAM RES CORP28 citations93
US5667631ASep 16, 1997
Dry etching of transparent electrodes in a low pressure plasma reactor
LAM RES CORP65 citations91
US7196896B2Mar 27, 2007
Dechucking method and apparatus for workpieces in vacuum processors
LAM RES CORP22 citations86
US12165844B2Dec 10, 2024
Uniformity control circuit for impedance match
LAM RES CORP3 citations73
US6197388B1Mar 6, 2001
Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer
LAM RES CORP5 citations59