Inventor
HAYWOOD JOHN
US14 patents
⚠️ This page may combine multiple inventors who share the name “HAYWOOD JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
7 patentsUS6087229AJul 11, 2000
Composite semiconductor gate dielectrics
LSI LOGIC CORP180 citations99
US6033998AMar 7, 2000
Method of forming variable thickness gate dielectrics
LSI LOGIC CORP96 citations98
US5902704AMay 11, 1999
Process for forming photoresist mask over integrated circuit structures with critical dimension control
LSI LOGIC CORP219 citations98
US5851890ADec 22, 1998
Process for forming integrated circuit structure with metal silicide contacts using notched sidewall spacer on gate electrode
LSI LOGIC CORP88 citations95
US6413881B1Jul 2, 2002
Process for forming thin gate oxide with enhanced reliability by nitridation of upper surface of gate of oxide to form barrier of nitrogen atoms in upper surface region of gate oxide, and resulting product
LSI LOGIC CORP60 citations94
US5837598ANov 17, 1998
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
LSI LOGIC CORP91 citations94
US6759337B1Jul 6, 2004
Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate
LSI LOGIC CORP3 citations61