P

Inventor

FAGUET JACQUES

US35 patents
⚠️ This page may combine multiple inventors who share the name “FAGUET JACQUES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

23 patents
US7897217B2Mar 1, 2011

Method and system for performing plasma enhanced atomic layer deposition

TOKYO ELECTRON LTD442 citations99
US7959985B2Jun 14, 2011

Method of integrating PEALD Ta-containing films into Cu metallization

TOKYO ELECTRON LTD61 citations98
US7485338B2Feb 3, 2009

Method for precursor delivery

TOKYO ELECTRON LTD19 citations92
US5972790AOct 26, 1999

Method for forming salicides

TOKYO ELECTRON LTD24 citations92
US7182816B2Feb 27, 2007

Particulate reduction using temperature-controlled chamber shield

TOKYO ELECTRON LTD20 citations86
US11691175B1Jul 4, 2023

Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)

TOKYO ELECTRON LTD2 citations67
US10115586B2Oct 30, 2018

Method for depositing a planarization layer using polymerization chemical vapor deposition

TOKYO ELECTRON LTD3 citations63
US7771790B2Aug 10, 2010

Method and system for fabricating a nano-structure

TOKYO ELECTRON LTD5 citations63
US7727912B2Jun 1, 2010

Method of light enhanced atomic layer deposition

TOKYO ELECTRON LTD2 citations63
US7569491B2Aug 4, 2009

Method for enlarging a nano-structure

TOKYO ELECTRON LTD5 citations63
US10896824B2Jan 19, 2021

Roughness reduction methods for materials using illuminated etch solutions

TOKYO ELECTRON LTD0 citations60
US7744735B2Jun 29, 2010

Ionized PVD with sequential deposition and etching

TOKYO ELECTRON LTD6 citations60
US12290835B2May 6, 2025

Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)

TOKYO ELECTRON LTD1 citations58
US12131914B2Oct 29, 2024

Selective etching with fluorine, oxygen and noble gas containing plasmas

TOKYO ELECTRON LTD0 citations58
US11120999B2Sep 14, 2021

Plasma etching method

TOKYO ELECTRON LTD0 citations58
US7901545B2Mar 8, 2011

Ionized physical vapor deposition (iPVD) process

TOKYO ELECTRON LTD6 citations58
US12249515B2Mar 11, 2025

Etching method and etching apparatus

TOKYO ELECTRON LTD0 citations57
US12444610B2Oct 14, 2025

Methods for etching a substrate using a hybrid wet atomic layer etching process

TOKYO ELECTRON LTD0 citations51
US12243752B2Mar 4, 2025

Systems for etching a substrate using a hybrid wet atomic layer etching process

TOKYO ELECTRON LTD0 citations51
US11915941B2Feb 27, 2024

Dynamically adjusted purge timing in wet atomic layer etching

TOKYO ELECTRON LTD0 citations50
US12112959B2Oct 8, 2024

Processing systems and platforms for roughness reduction of materials using illuminated etch solutions

TOKYO ELECTRON LTD0 citations49
US10818512B2Oct 27, 2020

Photo-assisted chemical vapor etch for selective removal of ruthenium

TOKYO ELECTRON LTD0 citations49
US11866831B2Jan 9, 2024

Methods for wet atomic layer etching of copper

TOKYO ELECTRON LTD0 citations47

LEE ERIC M

3 patents

FAGUET JACQUES

3 patents

NASMAN RONALD

2 patents

LIU JUNJUN

1 patent

IBM

1 patent

YUE HONGYU

1 patent

BRCKA JOZEF

1 patent