Inventor
FAGUET JACQUES
US35 patents
⚠️ This page may combine multiple inventors who share the name “FAGUET JACQUES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
23 patentsUS7897217B2Mar 1, 2011
Method and system for performing plasma enhanced atomic layer deposition
TOKYO ELECTRON LTD442 citations99
US7959985B2Jun 14, 2011
Method of integrating PEALD Ta-containing films into Cu metallization
TOKYO ELECTRON LTD61 citations98
US7485338B2Feb 3, 2009
Method for precursor delivery
TOKYO ELECTRON LTD19 citations92
US5972790AOct 26, 1999
Method for forming salicides
TOKYO ELECTRON LTD24 citations92
US7182816B2Feb 27, 2007
Particulate reduction using temperature-controlled chamber shield
TOKYO ELECTRON LTD20 citations86
US11691175B1Jul 4, 2023
Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)
TOKYO ELECTRON LTD2 citations67
US10115586B2Oct 30, 2018
Method for depositing a planarization layer using polymerization chemical vapor deposition
TOKYO ELECTRON LTD3 citations63
US7771790B2Aug 10, 2010
Method and system for fabricating a nano-structure
TOKYO ELECTRON LTD5 citations63
US7727912B2Jun 1, 2010
Method of light enhanced atomic layer deposition
TOKYO ELECTRON LTD2 citations63
US7569491B2Aug 4, 2009
Method for enlarging a nano-structure
TOKYO ELECTRON LTD5 citations63
US10896824B2Jan 19, 2021
Roughness reduction methods for materials using illuminated etch solutions
TOKYO ELECTRON LTD0 citations60
US7744735B2Jun 29, 2010
Ionized PVD with sequential deposition and etching
TOKYO ELECTRON LTD6 citations60
US12290835B2May 6, 2025
Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
TOKYO ELECTRON LTD1 citations58
US12131914B2Oct 29, 2024
Selective etching with fluorine, oxygen and noble gas containing plasmas
TOKYO ELECTRON LTD0 citations58
US11120999B2Sep 14, 2021
Plasma etching method
TOKYO ELECTRON LTD0 citations58
US7901545B2Mar 8, 2011
Ionized physical vapor deposition (iPVD) process
TOKYO ELECTRON LTD6 citations58
US12249515B2Mar 11, 2025
Etching method and etching apparatus
TOKYO ELECTRON LTD0 citations57
US12444610B2Oct 14, 2025
Methods for etching a substrate using a hybrid wet atomic layer etching process
TOKYO ELECTRON LTD0 citations51
US12243752B2Mar 4, 2025
Systems for etching a substrate using a hybrid wet atomic layer etching process
TOKYO ELECTRON LTD0 citations51
US11915941B2Feb 27, 2024
Dynamically adjusted purge timing in wet atomic layer etching
TOKYO ELECTRON LTD0 citations50
US12112959B2Oct 8, 2024
Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
TOKYO ELECTRON LTD0 citations49
US10818512B2Oct 27, 2020
Photo-assisted chemical vapor etch for selective removal of ruthenium
TOKYO ELECTRON LTD0 citations49
US11866831B2Jan 9, 2024
Methods for wet atomic layer etching of copper
TOKYO ELECTRON LTD0 citations47
LEE ERIC M
3 patentsFAGUET JACQUES
3 patentsUS8163087B2Apr 24, 2012
Plasma enhanced atomic layer deposition system and method
FAGUET JACQUES29 citations91
US9157152B2Oct 13, 2015
Vapor deposition system
FAGUET JACQUES12 citations83
US8815014B2Aug 26, 2014
Method and system for performing different deposition processes within a single chamber
FAGUET JACQUES3 citations61