Inventor
CERIO JR FRANK M
US19 patents
⚠️ This page may combine multiple inventors who share the name “CERIO JR FRANK M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
12 patentsUS7700474B2Apr 20, 2010
Barrier deposition using ionized physical vapor deposition (iPVD)
TOKYO ELECTRON LTD47 citations93
US7588667B2Sep 15, 2009
Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
TOKYO ELECTRON LTD53 citations93
US7651568B2Jan 26, 2010
Plasma enhanced atomic layer deposition system
TOKYO ELECTRON LTD26 citations92
US6268284B1Jul 31, 2001
In situ titanium aluminide deposit in high aspect ratio features
TOKYO ELECTRON LTD16 citations83
US7727912B2Jun 1, 2010
Method of light enhanced atomic layer deposition
TOKYO ELECTRON LTD2 citations63
US7799681B2Sep 21, 2010
Method for forming a ruthenium metal cap layer
TOKYO ELECTRON LTD4 citations62
US7348266B2Mar 25, 2008
Method and apparatus for a metallic dry-filling process
TOKYO ELECTRON LTD5 citations62
US7901545B2Mar 8, 2011
Ionized physical vapor deposition (iPVD) process
TOKYO ELECTRON LTD6 citations58
US7642201B2Jan 5, 2010
Sequential tantalum-nitride deposition
TOKYO ELECTRON LTD4 citations58
US7892406B2Feb 22, 2011
Ionized physical vapor deposition (iPVD) process
TOKYO ELECTRON LTD0 citations41
US7700484B2Apr 20, 2010
Method and apparatus for a metallic dry-filling process
TOKYO ELECTRON LTD0 citations41
US7618888B2Nov 17, 2009
Temperature-controlled metallic dry-fill process
TOKYO ELECTRON LTD0 citations41