Inventor
SUMMERFELT SCOTT R
US156 patents
⚠️ This page may combine multiple inventors who share the name “SUMMERFELT SCOTT R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
46 patentsUS6656748B2Dec 2, 2003
FeRAM capacitor post stack etch clean/repair
TEXAS INSTRUMENTS INC196 citations99
US6291282B1Sep 18, 2001
Method of forming dual metal gate structures or CMOS devices
TEXAS INSTRUMENTS INC387 citations99
US6177351B1Jan 23, 2001
Method and structure for etching a thin film perovskite layer
TEXAS INSTRUMENTS INC173 citations99
US5851896ADec 22, 1998
Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC147 citations99
US5619393AApr 8, 1997
High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers
TEXAS INSTRUMENTS INC103 citations99
US5585300ADec 17, 1996
Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC106 citations99
US5581436ADec 3, 1996
High-dielectric-constant material electrodes comprising thin platinum layers
TEXAS INSTRUMENTS INC131 citations99
US5566045AOct 15, 1996
High-dielectric-constant material electrodes comprising thin platinum layers
TEXAS INSTRUMENTS INC151 citations99
US5504041AApr 2, 1996
Conductive exotic-nitride barrier layer for high-dielectric-constant materials
TEXAS INSTRUMENTS INC233 citations99
US5471364ANov 28, 1995
Electrode interface for high-dielectric-constant materials
TEXAS INSTRUMENTS INC137 citations99
US6528386B1Mar 4, 2003
Protection of tungsten alignment mark for FeRAM processing
TEXAS INSTRUMENTS INC84 citations98
US6500678B1Dec 31, 2002
Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
TEXAS INSTRUMENTS INC101 citations98
US6211035B1Apr 3, 2001
Integrated circuit and method
TEXAS INSTRUMENTS INC370 citations98
US5972722AOct 26, 1999
Adhesion promoting sacrificial etch stop layer in advanced capacitor structures
TEXAS INSTRUMENTS INC107 citations98
US5612574AMar 18, 1997
Semiconductor structures using high-dielectric-constant materials and an adhesion layer
TEXAS INSTRUMENTS INC124 citations98
US5489548AFeb 6, 1996
Method of forming high-dielectric-constant material electrodes comprising sidewall spacers
TEXAS INSTRUMENTS INC201 citations98
US6713342B2Mar 30, 2004
FeRAM sidewall diffusion barrier etch
TEXAS INSTRUMENTS INC78 citations97
US6485988B2Nov 26, 2002
Hydrogen-free contact etch for ferroelectric capacitor formation
TEXAS INSTRUMENTS INC191 citations97
US7029925B2Apr 18, 2006
FeRAM capacitor stack etch
TEXAS INSTRUMENTS INC167 citations96
US6841439B1Jan 11, 2005
High permittivity silicate gate dielectric
TEXAS INSTRUMENTS INC52 citations96
US6534809B2Mar 18, 2003
Hardmask designs for dry etching FeRAM capacitor stacks
TEXAS INSTRUMENTS INC111 citations96
US6444542B2Sep 3, 2002
Integrated circuit and method
TEXAS INSTRUMENTS INC51 citations96
US6215650B1Apr 10, 2001
Electrical connections to dielectric materials
TEXAS INSTRUMENTS INC51 citations96
US6211034B1Apr 3, 2001
Metal patterning with adhesive hardmask layer
TEXAS INSTRUMENTS INC55 citations96
US6153490ANov 28, 2000
Method for forming integrated circuit capacitor and memory
TEXAS INSTRUMENTS INC75 citations96
US5825055AOct 20, 1998
Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
TEXAS INSTRUMENTS INC39 citations96
US5793057AAug 11, 1998
Conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes
TEXAS INSTRUMENTS INC87 citations96
US5729054AMar 17, 1998
Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC94 citations96
US5679980AOct 21, 1997
Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC88 citations96
US5665628ASep 9, 1997
Method of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC66 citations96
US5656852AAug 12, 1997
High-dielectric-constant material electrodes comprising sidewall spacers
TEXAS INSTRUMENTS INC41 citations96
US5650646AJul 22, 1997
Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer
TEXAS INSTRUMENTS INC45 citations96
US5605858AFeb 25, 1997
Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes
TEXAS INSTRUMENTS INC55 citations96
US5589284ADec 31, 1996
Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
TEXAS INSTRUMENTS INC78 citations96
US5576928ANov 19, 1996
High-dielectric-constant material electrodes comprising thin platinum layers
TEXAS INSTRUMENTS INC80 citations96
US5554564ASep 10, 1996
Pre-oxidizing high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC84 citations96
US5554866ASep 10, 1996
Pre-oxidizing high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC80 citations96
US5520992AMay 28, 1996
Electrodes for high dielectric constant materials
TEXAS INSTRUMENTS INC81 citations96
US5473171ADec 5, 1995
High-dielectric constant oxides on semiconductors using a Ge buffer layer
TEXAS INSTRUMENTS INC40 citations96
US5393352AFeb 28, 1995
Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer
TEXAS INSTRUMENTS INC90 citations96
US5348894ASep 20, 1994
Method of forming electrical connections to high dielectric constant materials
TEXAS INSTRUMENTS INC81 citations96
US5326721AJul 5, 1994
Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
TEXAS INSTRUMENTS INC72 citations96
US5238529AAug 24, 1993
Anisotropic metal oxide etch
TEXAS INSTRUMENTS INC57 citations96
US5696018ADec 9, 1997
Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC74 citations94
US5622893AApr 22, 1997
Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
TEXAS INSTRUMENTS INC86 citations94
US6362068B1Mar 26, 2002
Electrode interface for high-dielectric-constant materials
TEXAS INSTRUMENTS INC61 citations93
ADVANCED TECH MATERIALS
2 patentsUS6100200AAug 8, 2000
Sputtering process for the conformal deposition of a metallization or insulating layer
ADVANCED TECH MATERIALS133 citations97
US6320213B1Nov 20, 2001
Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same
ADVANCED TECH MATERIALS178 citations96
SUMMERFELT SCOTT R
1 patentAGILENT TECHNOLOGIES INC
1 patentShowing the top 50 of 156 patents by PatentIndex Score.