P

Inventor

SUMMERFELT SCOTT R

US156 patents
⚠️ This page may combine multiple inventors who share the name “SUMMERFELT SCOTT R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

46 patents
US6656748B2Dec 2, 2003

FeRAM capacitor post stack etch clean/repair

TEXAS INSTRUMENTS INC196 citations99
US6291282B1Sep 18, 2001

Method of forming dual metal gate structures or CMOS devices

TEXAS INSTRUMENTS INC387 citations99
US6177351B1Jan 23, 2001

Method and structure for etching a thin film perovskite layer

TEXAS INSTRUMENTS INC173 citations99
US5851896ADec 22, 1998

Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC147 citations99
US5619393AApr 8, 1997

High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers

TEXAS INSTRUMENTS INC103 citations99
US5585300ADec 17, 1996

Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC106 citations99
US5581436ADec 3, 1996

High-dielectric-constant material electrodes comprising thin platinum layers

TEXAS INSTRUMENTS INC131 citations99
US5566045AOct 15, 1996

High-dielectric-constant material electrodes comprising thin platinum layers

TEXAS INSTRUMENTS INC151 citations99
US5504041AApr 2, 1996

Conductive exotic-nitride barrier layer for high-dielectric-constant materials

TEXAS INSTRUMENTS INC233 citations99
US5471364ANov 28, 1995

Electrode interface for high-dielectric-constant materials

TEXAS INSTRUMENTS INC137 citations99
US6528386B1Mar 4, 2003

Protection of tungsten alignment mark for FeRAM processing

TEXAS INSTRUMENTS INC84 citations98
US6500678B1Dec 31, 2002

Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing

TEXAS INSTRUMENTS INC101 citations98
US6211035B1Apr 3, 2001

Integrated circuit and method

TEXAS INSTRUMENTS INC370 citations98
US5972722AOct 26, 1999

Adhesion promoting sacrificial etch stop layer in advanced capacitor structures

TEXAS INSTRUMENTS INC107 citations98
US5612574AMar 18, 1997

Semiconductor structures using high-dielectric-constant materials and an adhesion layer

TEXAS INSTRUMENTS INC124 citations98
US5489548AFeb 6, 1996

Method of forming high-dielectric-constant material electrodes comprising sidewall spacers

TEXAS INSTRUMENTS INC201 citations98
US6713342B2Mar 30, 2004

FeRAM sidewall diffusion barrier etch

TEXAS INSTRUMENTS INC78 citations97
US6485988B2Nov 26, 2002

Hydrogen-free contact etch for ferroelectric capacitor formation

TEXAS INSTRUMENTS INC191 citations97
US7029925B2Apr 18, 2006

FeRAM capacitor stack etch

TEXAS INSTRUMENTS INC167 citations96
US6841439B1Jan 11, 2005

High permittivity silicate gate dielectric

TEXAS INSTRUMENTS INC52 citations96
US6534809B2Mar 18, 2003

Hardmask designs for dry etching FeRAM capacitor stacks

TEXAS INSTRUMENTS INC111 citations96
US6444542B2Sep 3, 2002

Integrated circuit and method

TEXAS INSTRUMENTS INC51 citations96
US6215650B1Apr 10, 2001

Electrical connections to dielectric materials

TEXAS INSTRUMENTS INC51 citations96
US6211034B1Apr 3, 2001

Metal patterning with adhesive hardmask layer

TEXAS INSTRUMENTS INC55 citations96
US6153490ANov 28, 2000

Method for forming integrated circuit capacitor and memory

TEXAS INSTRUMENTS INC75 citations96
US5825055AOct 20, 1998

Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer

TEXAS INSTRUMENTS INC39 citations96
US5793057AAug 11, 1998

Conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes

TEXAS INSTRUMENTS INC87 citations96
US5729054AMar 17, 1998

Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC94 citations96
US5679980AOct 21, 1997

Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC88 citations96
US5665628ASep 9, 1997

Method of forming conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC66 citations96
US5656852AAug 12, 1997

High-dielectric-constant material electrodes comprising sidewall spacers

TEXAS INSTRUMENTS INC41 citations96
US5650646AJul 22, 1997

Pb/Bi-containing high-dielectric constant oxides using a non-Pb/Bi-containing perovskite as a buffer layer

TEXAS INSTRUMENTS INC45 citations96
US5605858AFeb 25, 1997

Method of forming high-dielectric-constant material electrodes comprising conductive sidewall spacers of same material as electrodes

TEXAS INSTRUMENTS INC55 citations96
US5589284ADec 31, 1996

Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics

TEXAS INSTRUMENTS INC78 citations96
US5576928ANov 19, 1996

High-dielectric-constant material electrodes comprising thin platinum layers

TEXAS INSTRUMENTS INC80 citations96
US5554564ASep 10, 1996

Pre-oxidizing high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC84 citations96
US5554866ASep 10, 1996

Pre-oxidizing high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC80 citations96
US5520992AMay 28, 1996

Electrodes for high dielectric constant materials

TEXAS INSTRUMENTS INC81 citations96
US5473171ADec 5, 1995

High-dielectric constant oxides on semiconductors using a Ge buffer layer

TEXAS INSTRUMENTS INC40 citations96
US5393352AFeb 28, 1995

Pb/Bi-containing high-dielectric constant oxides using a non-P/Bi-containing perovskite as a buffer layer

TEXAS INSTRUMENTS INC90 citations96
US5348894ASep 20, 1994

Method of forming electrical connections to high dielectric constant materials

TEXAS INSTRUMENTS INC81 citations96
US5326721AJul 5, 1994

Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer

TEXAS INSTRUMENTS INC72 citations96
US5238529AAug 24, 1993

Anisotropic metal oxide etch

TEXAS INSTRUMENTS INC57 citations96
US5696018ADec 9, 1997

Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC74 citations94
US5622893AApr 22, 1997

Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes

TEXAS INSTRUMENTS INC86 citations94
US6362068B1Mar 26, 2002

Electrode interface for high-dielectric-constant materials

TEXAS INSTRUMENTS INC61 citations93

ADVANCED TECH MATERIALS

2 patents

SUMMERFELT SCOTT R

1 patent

AGILENT TECHNOLOGIES INC

1 patent

Showing the top 50 of 156 patents by PatentIndex Score.