Inventor
SPADINI GIANPAOLO
US42 patents
⚠️ This page may combine multiple inventors who share the name “SPADINI GIANPAOLO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
17 patentsUS9590012B2Mar 7, 2017
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC29 citations94
US9576659B2Feb 21, 2017
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC13 citations93
US9368554B2Jun 14, 2016
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC15 citations93
US9306165B2Apr 5, 2016
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC12 citations93
US10090050B2Oct 2, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC4 citations84
US10050084B2Aug 14, 2018
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC4 citations84
US9905296B2Feb 27, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC6 citations84
US9734907B2Aug 15, 2017
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC8 citations84
US9543003B2Jan 10, 2017
Memory array plane select
MICRON TECHNOLOGY INC9 citations84
US10475853B2Nov 12, 2019
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC2 citations73
US9659997B2May 23, 2017
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC3 citations73
US11563055B2Jan 24, 2023
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC0 citations63
US10163507B1Dec 25, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC1 citations63
US10783965B2Sep 22, 2020
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC0 citations52
US10692930B2Jun 23, 2020
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC0 citations52
US10304534B2May 28, 2019
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC0 citations52
US9645102B2May 9, 2017
Material test structure
MICRON TECHNOLOGY INC0 citations52
OVONYX INC
4 patentsUS7990761B2Aug 2, 2011
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC7 citations84
US9036409B2May 19, 2015
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC3 citations73
US9251895B2Feb 2, 2016
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC0 citations52
US8861293B2Oct 14, 2014
Immunity of phase change material to disturb in the amorphous phase
OVONYX INC0 citations52
MICROCHIP TECH INC
4 patentsUS6504191B2Jan 7, 2003
Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
MICROCHIP TECH INC11 citations73
US6300183B1Oct 9, 2001
Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
MICROCHIP TECH INC14 citations73
US5733795AMar 31, 1998
Method of fabricating a MOS read-only semiconductor memory array
MICROCHIP TECH INC9 citations69
US5644154AJul 1, 1997
MOS read-only semiconductor memory with selected source/drain regions spaced away from edges of overlying gate electrode regions and method therefor
MICROCHIP TECH INC2 citations58
KARPOV ELIJAH V
3 patentsUS8462537B2Jun 11, 2013
Method and apparatus to reset a phase change memory and switch (PCMS) memory cell
KARPOV ELIJAH V53 citations98
US9021227B2Apr 28, 2015
Drift management in a phase change memory and switch (PCMS) memory device
KARPOV ELIJAH V10 citations84
US8971089B2Mar 3, 2015
Low power phase change memory cell
KARPOV ELIJAH V4 citations73