Inventor
CHOI JUN-HEE
KR38 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUN-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG SDI CO LTD
19 patentsUS6420726B2Jul 16, 2002
Triode structure field emission device
SAMSUNG SDI CO LTD78 citations96
US7268480B2Sep 11, 2007
Field emission device, display adopting the same and method of manufacturing the same
SAMSUNG SDI CO LTD10 citations83
US7173366B2Feb 6, 2007
Field emission display having carbon nanotube emitter and method of manufacturing the same
SAMSUNG SDI CO LTD12 citations83
US7525244B2Apr 28, 2009
Field emission type backlight device
SAMSUNG SDI CO LTD11 citations82
US6809464B2Oct 26, 2004
Field emission device and method for fabricating the same
SAMSUNG SDI CO LTD8 citations74
US6632114B2Oct 14, 2003
Method for manufacturing field emission device
SAMSUNG SDI CO LTD9 citations74
US6468916B2Oct 22, 2002
Method of forming structure having surface roughness due to nano-sized surface features
SAMSUNG SDI CO LTD8 citations74
US7193357B2Mar 20, 2007
Field emission backlight device and method of fabricating
SAMSUNG SDI CO LTD8 citations73
US7045807B2May 16, 2006
Field emission device, field emission display adopting the same and manufacturing method thereof
SAMSUNG SDI CO LTD2 citations63
US6927534B2Aug 9, 2005
Field emission device
SAMSUNG SDI CO LTD3 citations63
US7326098B2Feb 5, 2008
Method of fabricating a field emission backlight device
SAMSUNG SDI CO LTD2 citations62
US7239079B2Jul 3, 2007
Field emission display and manufacturing method thereof
SAMSUNG SDI CO LTD2 citations62
US7132304B2Nov 7, 2006
Field emission device, display adopting the same and method of manufacturing the same
SAMSUNG SDI CO LTD5 citations62
US7106124B2Sep 12, 2006
Field emission RF amplifier
SAMSUNG SDI CO LTD2 citations62
US7646142B2Jan 12, 2010
Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture
SAMSUNG SDI CO LTD2 citations61
US7517710B2Apr 14, 2009
Method of manufacturing field emission device
SAMSUNG SDI CO LTD3 citations61
US7432646B2Oct 7, 2008
Thermal electron emission backlight device
SAMSUNG SDI CO LTD6 citations61
US7678424B2Mar 16, 2010
Forming carbon nanotube emitter
SAMSUNG SDI CO LTD1 citations51
US7508124B2Mar 24, 2009
Field emission device, display adopting the same and method of manufacturing the same
SAMSUNG SDI CO LTD0 citations51
SAMSUNG ELECTRONICS CO LTD
11 patentsUS9269775B2Feb 23, 2016
Tunneling devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD30 citations90
US9385251B2Jul 5, 2016
Flexible semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9082844B2Jul 14, 2015
Methods of transferring semiconductor elements and manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US7960220B2Jun 14, 2011
Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
SAMSUNG ELECTRONICS CO LTD4 citations62
US7887301B2Feb 15, 2011
Electro-hydrodynamic micro-pump and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7851231B2Dec 14, 2010
Method of fabricating field emission array type light emitting unit
SAMSUNG ELECTRONICS CO LTD0 citations52
US9136353B2Sep 15, 2015
Polysilicon-based thin film transistor
SAMSUNG ELECTRONICS CO LTD0 citations51
US7576355B2Aug 18, 2009
Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations51
US8889442B2Nov 18, 2014
Flexible semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US10304995B2May 28, 2019
Flexible electric device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US8033881B2Oct 11, 2011
Method of manufacturing field emission device
SAMSUNG ELECTRONICS CO LTD0 citations41
KIM SUN-IL
3 patentsUS8917440B2Dec 23, 2014
Active optical device using phase change material
KIM SUN-IL7 citations84
US8854596B2Oct 7, 2014
Active optical device employing refractive index variable regions
KIM SUN-IL3 citations63
US9104031B2Aug 11, 2015
Active optical device and display apparatus including the same
KIM SUN-IL0 citations42
CHOI JUN-HEE
3 patentsUS9748094B2Aug 29, 2017
Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure
CHOI JUN-HEE0 citations48
US8445333B2May 21, 2013
Method of forming polysilicon, thin film transistor using the polysilicon, and method of fabricating the thin film transistor
CHOI JUN-HEE0 citations48
US8952243B2Feb 10, 2015
Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof
CHOI JUN-HEE0 citations38