Inventor

UDAGAWA TAKASHI

JP82 patents

⚠️ This page may combine multiple inventors who share the name “UDAGAWA TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UDAGAWA TAKASHI

SHOWA DENKO KK

Group-III nitride semiconductor light-emitting device

Group-III nitride semiconductor light-emitting device and production method thereof

Electrode for light-emitting semiconductor devices and method of producing the electrode

Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer

Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp

Multicolor light-emitting lamp and light source

Vapor phase deposition system

Group-III nitride semiconductor light-emitting diode

Group-III nitride semiconductor light-emitting device

Group-III nitride semiconductor light-emitting device and manufacturing method for the same

Nitride semiconductor light-emitting device and manufacturing method of the same

Method of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structure

Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer

Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode

Electrode for light-emitting semiconductor devices

Electrode for light-emitting semiconductor devices and method of producing the electrode

Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer

Boron phosphide-based semiconductor device and production method thereof

Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp

Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate

Semiconductor device, semiconductor layer and production method thereof

Group-III nitride semiconductor light-emitting device and production method thereof

Group-III nitride semiconductor device, production method thereof and light-emitting diode

Compound semiconductor device, production method thereof, light-emitting device and transistor

Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode

Stacked layer structure, light-emitting device, lamp, and light source unit

P-n junction type boron phosphide-based semiconductor light-emitting device and production method thereof

P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source

Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode

Compound semiconductor device, production method thereof, light-emitting device and transistor

Compound semiconductor multilayer structure and bipolar transistor using the same

Method for fabricating a GaInP epitaxial stacking structure

Electrode for light-emitting semiconductor devices and method of producing the electrode

GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure

AlGaInP light-emitting diode

Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device

Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure

Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor

Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode

Semiconductor device, semiconductor layer and production method thereof

Boron phoshide-based compound semiconductor device, production method thereof and light-emitting diode

Boron phosphide-based semiconductor light-emitting device and production method thereof

Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer

KANSAI PAINT CO LTD

Process for coating metallic substrate

Process for coating automotive outer bodies

Process for coating metallic substrate

Process for coating metallic substrate

Process for coating steel panels

KIKUCHI TOMO

Group III nitride semiconductor light-emitting device

TOKYO SHIBAURA ELECTRIC CO

Vertical type vapor-phase growth apparatus