Inventor
HERNER S BRAD
US95 patents
⚠️ This page may combine multiple inventors who share the name “HERNER S BRAD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
29 patentsUS7875871B2Jan 25, 2011
Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
SANDISK 3D LLC120 citations99
US7405465B2Jul 29, 2008
Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
SANDISK 3D LLC130 citations99
US7285464B2Oct 23, 2007
Nonvolatile memory cell comprising a reduced height vertical diode
SANDISK 3D LLC139 citations99
US7176064B2Feb 13, 2007
Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide
SANDISK 3D LLC337 citations99
US7888205B2Feb 15, 2011
Highly scalable thin film transistor
SANDISK 3D LLC95 citations98
US7830697B2Nov 9, 2010
High forward current diodes for reverse write 3D cell
SANDISK 3D LLC57 citations98
US7812404B2Oct 12, 2010
Nonvolatile memory cell comprising a diode and a resistance-switching material
SANDISK 3D LLC55 citations98
US7767499B2Aug 3, 2010
Method to form upward pointing p-i-n diodes having large and uniform current
SANDISK 3D LLC57 citations98
US7745312B2Jun 29, 2010
Selective germanium deposition for pillar devices
SANDISK 3D LLC89 citations98
US7667999B2Feb 23, 2010
Method to program a memory cell comprising a carbon nanotube fabric and a steering element
SANDISK 3D LLC59 citations98
US7501331B2Mar 10, 2009
Low-temperature metal-induced crystallization of silicon-germanium films
SANDISK 3D LLC52 citations98
US7238607B2Jul 3, 2007
Method to minimize formation of recess at surface planarized by chemical mechanical planarization
SANDISK 3D LLC162 citations98
US7224013B2May 29, 2007
Junction diode comprising varying semiconductor compositions
SANDISK 3D LLC122 citations98
US7586773B2Sep 8, 2009
Large array of upward pointing p-i-n diodes having large and uniform current
SANDISK 3D LLC28 citations96
US7660181B2Feb 9, 2010
Method of making non-volatile memory cell with embedded antifuse
SANDISK 3D LLC49 citations94
US7982209B2Jul 19, 2011
Memory cell comprising a carbon nanotube fabric element and a steering element
SANDISK 3D LLC41 citations93
US7682920B2Mar 23, 2010
Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
SANDISK 3D LLC19 citations93
US7648896B2Jan 19, 2010
Deposited semiconductor structure to minimize n-type dopant diffusion and method of making
SANDISK 3D LLC23 citations93
US7560339B2Jul 14, 2009
Nonvolatile memory cell comprising a reduced height vertical diode
SANDISK 3D LLC22 citations93
US7557405B2Jul 7, 2009
High-density nonvolatile memory
SANDISK 3D LLC20 citations93
US7906392B2Mar 15, 2011
Pillar devices and methods of making thereof
SANDISK 3D LLC21 citations92
US7265049B2Sep 4, 2007
Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devices
SANDISK 3D LLC69 citations92
US7855119B2Dec 21, 2010
Method for forming polycrystalline thin film bipolar transistors
SANDISK 3D LLC12 citations84
US7816659B2Oct 19, 2010
Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
SANDISK 3D LLC8 citations84
US7808810B2Oct 5, 2010
Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
SANDISK 3D LLC12 citations84
US7800934B2Sep 21, 2010
Programming methods to increase window for reverse write 3D cell
SANDISK 3D LLC11 citations84
US7800933B2Sep 21, 2010
Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
SANDISK 3D LLC19 citations84
US8018024B2Sep 13, 2011
P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
SANDISK 3D LLC4 citations74
US7915095B2Mar 29, 2011
Silicide-silicon oxide-semiconductor antifuse device and method of making
SANDISK 3D LLC6 citations74
MATRIX SEMICONDUCTOR INC
11 patentsUS6984561B2Jan 10, 2006
Method for making high density nonvolatile memory
MATRIX SEMICONDUCTOR INC131 citations99
US6952030B2Oct 4, 2005
High-density three-dimensional memory cell
MATRIX SEMICONDUCTOR INC472 citations99
US6951780B1Oct 4, 2005
Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays
MATRIX SEMICONDUCTOR INC172 citations99
US6946719B2Sep 20, 2005
Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
MATRIX SEMICONDUCTOR INC288 citations99
US6853049B2Feb 8, 2005
Silicide-silicon oxide-semiconductor antifuse device and method of making
MATRIX SEMICONDUCTOR INC165 citations99
US6815781B2Nov 9, 2004
Inverted staggered thin film transistor with salicided source/drain structures and method of making same
MATRIX SEMICONDUCTOR INC309 citations99
US7009275B2Mar 7, 2006
Method for making high density nonvolatile memory
MATRIX SEMICONDUCTOR INC37 citations96
US6995422B2Feb 7, 2006
High-density three-dimensional memory
MATRIX SEMICONDUCTOR INC52 citations96
US6956278B2Oct 18, 2005
Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers
MATRIX SEMICONDUCTOR INC40 citations93
US6960495B2Nov 1, 2005
Method for making contacts in a high-density memory
MATRIX SEMICONDUCTOR INC41 citations92
US6815077B1Nov 9, 2004
Low temperature, low-resistivity heavily doped p-type polysilicon deposition
MATRIX SEMICONDUCTOR INC29 citations92
SIVARAM SRINIVASAN
2 patentsKUMAR TANMAY
1 patentSANDISK CORP
1 patentMATRIX SEMICONDUCTORS INC
1 patentSANDDISK 3D LLC
1 patentRAGHURAM USHA
1 patentHERNER S BRAD
1 patentTWIN CREEKS TECHNOLOGIES INC
1 patentDUNTON VANCE
1 patentShowing the top 50 of 95 patents by PatentIndex Score.