Inventor

AUBERTINE DANIEL B

US23 patents

⚠️ This page may combine multiple inventors who share the name “AUBERTINE DANIEL B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AUBERTINE DANIEL B

INTEL CORP

Nanowire transistor devices and forming techniques

Nanowire transistor devices and forming techniques

Pre-sculpting of Si fin elements prior to cladding for transistor channel applications

High mobility strained channels for fin-based transistors

Transistor fin formation via cladding on sacrificial core

High mobility strained channels for fin-based transistors

Self-aligned 3-D epitaxial structures for MOS device fabrication

Techniques for controlling transistor sub-fin leakage

Pre-sculpting of Si fin elements prior to cladding for transistor channel applications

Pre-sculpting of Si fin elements prior to cladding for transistor channel applications

Crystallized silicon carbon replacement material for NMOS source/drain regions

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Precursor gas mixture for depositing an epitaxial carbon-doped silicon film

Fin sculpting and cladding during replacement gate process for transistor channel applications

GLASS GLENN A

Self-aligned 3-D epitaxial structures for MOS device fabrication

Nanowire transistor devices and forming techniques

Conversion of thin transistor elements from silicon to silicon germanium

CEA STEPHEN M

High mobility strained channels for fin-based transistors

WEBER CORY

Enhanced dislocation stress transistor

TAHOE RES LTD

Self-aligned 3-D epitaxial structures for MOS device fabrication