Inventor

LEESER KARL

US54 patents

⚠️ This page may combine multiple inventors who share the name “LEESER KARL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEESER KARL

LAM RES CORP

Sequential precursor dosing in an ALD multi-station/batch reactor

Plasma suppression behind a showerhead through the use of increased pressure

Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal

Multiple-output radiofrequency matching module and associated methods

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Deposition apparatus including edge plenum showerhead assembly

Chemical deposition apparatus having conductance control

Carrier plate for use in plasma processing systems

Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal

Systems and methods for frequency modulation of radiofrequency power supply for controlling plasma instability

Sequential precursor dosing in an ALD multi-station/batch reactor

Mutually induced filters

Mutually induced filters

Planar substrate edge contact with open volume equalization pathways and side containment

Valve manifold deadleg elimination via reentrant flow path

Optimized low energy / high productivity deposition system

Multiple-output radiofrequency matching module and associated methods

Mutually induced filters

Multiple-output radiofrequency matching module and associated methods

Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal

Carrier plate for use in plasma processing systems

Planar substrate edge contact with open volume equalization pathways and side containment

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

Multiple-output radiofrequency matching module and associated methods

Flow through line charge volume

Line charge volume with integrated pressure measurement

Substrate support with increasing areal density and corresponding method of fabricating

Multiple-output radiofrequency matching module and associated methods

Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal

Tandem source activation for CVD of films

Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal

Common terminal heater for ceramic pedestals used in semiconductor fabrication

Ammonia radical generator

Radical generator and method for generating ammonia radicals

Tandem source activation for CVD of films

Tandem source activation for cyclical deposition of films

Mutually induced filters

Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication

NOVELLUS SYSTEMS INC

Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor

Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region

Method of reducing plasma stabilization time in a cyclic deposition process

Carousel reactor for multi-station, sequential processing systems

Method of increasing the reactivity of a precursor in a cyclic deposition process

Sequential cascading of reaction volumes as a chemical reuse strategy

Magnetic lensing to improve deposition uniformity in a physical vapor deposition (PVD) process

UNIVESITY OF CALIFORNIA

Controlled nano-doping of ultra thin films

KEIL DOUGLAS

Mechanical suppression of parasitic plasma in substrate processing chamber

CHIANG TONY P

Modulated ion-induced atomic layer deposition (MII-ALD)