Inventor

IIZUKA TOSHIHIRO

JP20 patents

⚠️ This page may combine multiple inventors who share the name “IIZUKA TOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IIZUKA TOSHIHIRO

NEC CORP

Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD

Method of manufacturing semiconductor device having thin film capacitor

DRAM having a stacked capacitor and a method for fabricating the same

Semiconductor memory device production method

Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same

Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same

Methods and apparatus for three-dimensional nonvolatile memory

IIZUKA TOSHIHIRO

Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)

Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure

Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0&lt;x&lt;1), (ZRy, Ti (O&lt;y&lt;1), (Hfz, Ti-z)O2 (O&lt;z&lt;1) and (Zrk, Ti1, Hfm)O2 (O&lt;K, 1, m&lt;1, K+1+m=1)

SAMSUNG ELECTRONICS CO LTD

Sintered body, method of fabricating the same, semiconductor fabricating device, and method of fabricating semiconductor fabricating device

Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus

RENESAS ELECTRONICS CORP

Process for manufacturing a semiconductor device comprising a metal-compound film

Semiconductor device including a plurality of nitride semiconductor layers

SANDISK 3D LLC

Silicided bit line for reversible-resistivity memory

NEC ELECTRONICS CORP

Method for forming capacitor

MANABE KENZO

Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes

TDK CORP

Magnetic head device with constant head floating height

FUKUMAKI NAOMI

Method of manufacturing a semiconductor device

Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)