Inventor
MASUOKA SADAAKI
KR19 patents
⚠️ This page may combine multiple inventors who share the name “MASUOKA SADAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
8 patentsUS6133082AOct 17, 2000
Method of fabricating CMOS semiconductor device
NEC CORP64 citations95
US6342413B1Jan 29, 2002
Method of manufacturing semiconductor device
NEC CORP25 citations92
US6217357B1Apr 17, 2001
Method of manufacturing two-power supply voltage compatible CMOS semiconductor device
NEC CORP30 citations92
US5994743ANov 30, 1999
Semiconductor device having different sidewall widths and different source/drain depths for NMOS & PMOS structures
NEC CORP41 citations92
US5994179ANov 30, 1999
Method of fabricating a MOSFET featuring an effective suppression of reverse short-channel effect
NEC CORP21 citations92
US5733792AMar 31, 1998
MOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the same
NEC CORP29 citations92
US6413811B1Jul 2, 2002
Method of forming a shared contact in a semiconductor device including MOSFETS
NEC CORP15 citations83
US6472714B1Oct 29, 2002
Semiconductor device in which memory cells and peripheral circuits are provided on the same circuit
NEC CORP3 citations63
NEC ELECTRONICS CORP
6 patentsUS6551884B2Apr 22, 2003
Semiconductor device including gate insulation films having different thicknesses
NEC ELECTRONICS CORP97 citations97
US7498626B2Mar 3, 2009
Semiconductor device and method of manufacturing the same
NEC ELECTRONICS CORP0 citations52
US6627490B2Sep 30, 2003
Semiconductor device and method for fabricating the same
NEC ELECTRONICS CORP0 citations52
US7256462B2Aug 14, 2007
Semiconductor device
NEC ELECTRONICS CORP1 citations51
US6798027B2Sep 28, 2004
Semiconductor device including gate insulation films having different thicknesses
NEC ELECTRONICS CORP0 citations51
US7190009B2Mar 13, 2007
Semiconductor device
NEC ELECTRONICS CORP0 citations41
SAMSUNG ELECTRONICS CO LTD
5 patentsUS10833085B2Nov 10, 2020
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations80
US12294005B2May 6, 2025
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations74
US11862639B2Jan 2, 2024
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11437377B2Sep 6, 2022
Method of manufacturing semiconductor device having a plurality of channel layers
SAMSUNG ELECTRONICS CO LTD0 citations62
US8753945B2Jun 17, 2014
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations37