Inventor
WHANG SUNG MAN
KR8 patents
Patents
8 patentsUS6541328B2Apr 1, 2003
Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions
SAMSUNG ELECTRONICS CO LTD125 citations95
US10396205B2Aug 27, 2019
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD7 citations82
US10833085B2Nov 10, 2020
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations80
US12294005B2May 6, 2025
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations74
US11705503B2Jul 18, 2023
Semiconductor device including non-sacrificial gate spacers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11862639B2Jan 2, 2024
Semiconductor device having a plurality of channel layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11437377B2Sep 6, 2022
Method of manufacturing semiconductor device having a plurality of channel layers
SAMSUNG ELECTRONICS CO LTD0 citations62
US9905645B2Feb 27, 2018
Vertical field effect transistor having an elongated channel
SAMSUNG ELECTRONICS CO LTD0 citations51