Inventor

VASEN TIMOTHY

TW26 patents

Patents

26 patents

US11088337B2Aug 10, 2021

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84

US11769798B2Sep 26, 2023

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11659721B2May 23, 2023

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11653507B2May 16, 2023

Gate all around semiconductor structure with diffusion break

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11437594B2Sep 6, 2022

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11276832B2Mar 15, 2022

Semiconductor structure with diffusion break and method

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11165032B2Nov 2, 2021

Field effect transistor using carbon nanotubes

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11088246B2Aug 10, 2021

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10923659B2Feb 16, 2021

Wafers for use in aligning nanotubes and methods of making and using the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10879469B1Dec 29, 2020

Method of manufacturing a field effect transistor using nanotube structures and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US12588348B2Mar 24, 2026

Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12218198B2Feb 4, 2025

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12193318B2Jan 7, 2025

Method of forming semiconductor device having carbon nanotube

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12089423B2Sep 10, 2024

Gate all around semiconductor structure with diffusion break

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12069874B2Aug 20, 2024

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12010856B2Jun 11, 2024

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11764289B2Sep 19, 2023

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US10672899B2Jun 2, 2020

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

VASEN TIMOTHY

Patents

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

Gate all around semiconductor structure with diffusion break

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Semiconductor structure with diffusion break and method

Field effect transistor using carbon nanotubes

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Wafers for use in aligning nanotubes and methods of making and using the same

Method of manufacturing a field effect transistor using nanotube structures and a field effect transistor

Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Method of forming semiconductor device having carbon nanotube

Gate all around semiconductor structure with diffusion break

Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistors

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Method of manufacturing a semiconductor device and a semiconductor device

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

Wafers for use in aligning nanotubes and methods of making and using the same

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage

Method of forming semiconductor device having carbon nanotube

Field effect transistor and method of manufacturing the same

Method of manufacturing a semiconductor device and a semiconductor device

Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor

Tunnel field-effect transistor with reduced trap-assisted tunneling leakage