P

Inventor

PARK SAEHAN

US13 patents

Patents

13 patents
US11881455B2Jan 23, 2024

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations84
US12230571B2Feb 18, 2025

Integrated circuit devices including a power rail and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US12125788B2Oct 22, 2024

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US11769728B2Sep 26, 2023

Backside power distribution network semiconductor package and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US12557677B2Feb 17, 2026

Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12142564B2Nov 12, 2024

Backside power distribution network semiconductor package and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US12183738B2Dec 31, 2024

Cross-coupled gate design for stacked device with separated top-down gate

SAMSUNG ELECTRONICS CO LTD0 citations51
US12144163B2Nov 12, 2024

Selective double diffusion break structures for multi-stack semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12131996B2Oct 29, 2024

Stacked device with backside power distribution network and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12588249B2Mar 24, 2026

Integrated circuit devices including a cross-coupled structure

SAMSUNG ELECTRONICS CO LTD0 citations50
US12374623B2Jul 29, 2025

Stacked semiconductor device architecture

SAMSUNG ELECTRONICS CO LTD0 citations50
US12364018B2Jul 15, 2025

Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12588489B2Mar 24, 2026

Integrated circuit devices including stacked elements and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations47