Inventor
SON GIL HWAN
US8 patents
Patents
8 patentsUS11881455B2Jan 23, 2024
Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US12125788B2Oct 22, 2024
Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11769728B2Sep 26, 2023
Backside power distribution network semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US12262560B2Mar 25, 2025
Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11923365B2Mar 5, 2024
Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11804540B2Oct 31, 2023
Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538924B2Dec 27, 2022
Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12142564B2Nov 12, 2024
Backside power distribution network semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60