Inventor
LEE BYOUNG IL
KR22 patents
⚠️ This page may combine multiple inventors who share the name “LEE BYOUNG IL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS9773806B1Sep 26, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD21 citations93
US10566346B2Feb 18, 2020
Vertical-type memory device
SAMSUNG ELECTRONICS CO LTD20 citations92
US10204919B2Feb 12, 2019
Vertical memory device
SAMSUNG ELECTRONICS CO LTD11 citations83
US10515974B2Dec 24, 2019
Semiconductor Device
SAMSUNG ELECTRONICS CO LTD6 citations82
US10825832B2Nov 3, 2020
Semiconductor device including gates
SAMSUNG ELECTRONICS CO LTD2 citations71
US10553605B2Feb 4, 2020
Semiconductor device including gates
SAMSUNG ELECTRONICS CO LTD2 citations71
US10978465B2Apr 13, 2021
Three-dimensional semiconductor device having a memory block and separation structures
SAMSUNG ELECTRONICS CO LTD3 citations69
US10515819B2Dec 24, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations69
US10672781B2Jun 2, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US12058863B2Aug 6, 2024
Semiconductor memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11778821B2Oct 3, 2023
Semiconductor memory devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11004866B2May 11, 2021
Vertical-type memory device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11812609B2Nov 7, 2023
Three-dimensional semiconductor device having a first main separation structure and a second main separation structure on a lower structure
SAMSUNG ELECTRONICS CO LTD0 citations59
US11011536B2May 18, 2021
Vertical memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10211220B2Feb 19, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10998327B2May 4, 2021
Semiconductor device including separation lines
SAMSUNG ELECTRONICS CO LTD0 citations50