Inventor
WU JAU-YI
TW47 patents
⚠️ This page may combine multiple inventors who share the name “WU JAU-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS10510951B1Dec 17, 2019
Low temperature film for PCRAM sidewall protection
TAIWAN SEMICONDUCTOR MFG CO LTD26 citations94
US10374010B2Aug 6, 2019
Phase change memory structure and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12075713B2Aug 27, 2024
Phase-change memory and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910621B2Feb 20, 2024
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11700779B2Jul 11, 2023
Method of forming phase-change memory layers on recessed electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11443803B2Sep 13, 2022
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11302865B2Apr 12, 2022
Phase-change memory with two-portioned phase-change layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11276818B2Mar 15, 2022
Phase change memory structure and the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245072B2Feb 8, 2022
Phase-change memory and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11152569B2Oct 19, 2021
PCRAM structure with selector device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10872664B1Dec 22, 2020
PCRAM analog programming by a gradual reset cooling step
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847221B2Nov 24, 2020
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797107B2Oct 6, 2020
Semiconductor memory device including phase change material layers and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10693060B2Jun 23, 2020
Phase change memory structure and the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10541365B1Jan 21, 2020
Phase change memory and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11139430B2Oct 5, 2021
Phase change random access memory and method of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12477961B2Nov 18, 2025
Method of forming phase-change memory layers on recessed electrodes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477747B2Nov 18, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12327588B2Jun 10, 2025
Stressing algorithm for solving cell-to-cell variations in phase change memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11974510B2Apr 30, 2024
Phase change memory structure and the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11950518B2Apr 2, 2024
Phase-change random access memory device and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862243B2Jan 2, 2024
Memory device and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862244B2Jan 2, 2024
Stressing algorithm for solving cell-to-cell variations in phase change memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856795B2Dec 26, 2023
Phase change memory structure and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823741B2Nov 21, 2023
PCRAM analog programming by a gradual reset cooling step
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11696519B2Jul 4, 2023
Phase-change memory and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11563056B2Jan 24, 2023
Semiconductor memory device including phase change material layers and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11475950B2Oct 18, 2022
Stressing algorithm for solving cell-to-cell variations in phase change memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349070B2May 31, 2022
Phase-change random access memory device with doped Ge—Sb—Te layers and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289161B2Mar 29, 2022
PCRAM analog programming by a gradual reset cooling step
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11276464B2Mar 15, 2022
Programming method and reading method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217304B2Jan 4, 2022
Memory operation method and circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145690B2Oct 12, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127790B2Sep 21, 2021
Phase change memory structure and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11005040B2May 11, 2021
Low temperature film for PCRAM sidewall protection
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978148B1Apr 13, 2021
Hybrid sensing scheme compensating for cell resistance instability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971223B2Apr 6, 2021
Phase change memory operation method and circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10950664B2Mar 16, 2021
Semiconductor memory device including phase change material layers and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10818349B2Oct 27, 2020
Programming method and reading method for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11152565B2Oct 19, 2021
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
ASUSTEK COMP INC
7 patentsUSD926186SJul 27, 2021
Keyboard
ASUSTEK COMP INC2 citations72
USD918910SMay 11, 2021
Keyboard
ASUSTEK COMP INC2 citations72
USD822673SJul 10, 2018
Keyboard
ASUSTEK COMP INC4 citations72
USD1029837SJun 4, 2024
Keyboard
ASUSTEK COMP INC0 citations62
US11847313B2Dec 19, 2023
Electronic device having touchpad with operating functions selected based on gesture command and touch method thereof
ASUSTEK COMP INC0 citations62
US11630872B2Apr 18, 2023
Internet data collection method
ASUSTEK COMP INC0 citations62
US10699853B2Jun 30, 2020
Key structure
ASUSTEK COMP INC1 citations58