P

Inventor

WU JAU-YI

TW47 patents
⚠️ This page may combine multiple inventors who share the name “WU JAU-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US10510951B1Dec 17, 2019

Low temperature film for PCRAM sidewall protection

TAIWAN SEMICONDUCTOR MFG CO LTD26 citations94
US10374010B2Aug 6, 2019

Phase change memory structure and manufacturing method for the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12075713B2Aug 27, 2024

Phase-change memory and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11910621B2Feb 20, 2024

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11700779B2Jul 11, 2023

Method of forming phase-change memory layers on recessed electrodes

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11443803B2Sep 13, 2022

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11302865B2Apr 12, 2022

Phase-change memory with two-portioned phase-change layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11276818B2Mar 15, 2022

Phase change memory structure and the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245072B2Feb 8, 2022

Phase-change memory and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11152569B2Oct 19, 2021

PCRAM structure with selector device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10872664B1Dec 22, 2020

PCRAM analog programming by a gradual reset cooling step

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847221B2Nov 24, 2020

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797107B2Oct 6, 2020

Semiconductor memory device including phase change material layers and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10693060B2Jun 23, 2020

Phase change memory structure and the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10541365B1Jan 21, 2020

Phase change memory and method of fabricating same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11139430B2Oct 5, 2021

Phase change random access memory and method of manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12477961B2Nov 18, 2025

Method of forming phase-change memory layers on recessed electrodes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477747B2Nov 18, 2025

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12327588B2Jun 10, 2025

Stressing algorithm for solving cell-to-cell variations in phase change memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11974510B2Apr 30, 2024

Phase change memory structure and the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11950518B2Apr 2, 2024

Phase-change random access memory device and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862243B2Jan 2, 2024

Memory device and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862244B2Jan 2, 2024

Stressing algorithm for solving cell-to-cell variations in phase change memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856795B2Dec 26, 2023

Phase change memory structure and manufacturing method for the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823741B2Nov 21, 2023

PCRAM analog programming by a gradual reset cooling step

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11696519B2Jul 4, 2023

Phase-change memory and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11563056B2Jan 24, 2023

Semiconductor memory device including phase change material layers and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11475950B2Oct 18, 2022

Stressing algorithm for solving cell-to-cell variations in phase change memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349070B2May 31, 2022

Phase-change random access memory device with doped Ge—Sb—Te layers and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289161B2Mar 29, 2022

PCRAM analog programming by a gradual reset cooling step

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11276464B2Mar 15, 2022

Programming method and reading method for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217304B2Jan 4, 2022

Memory operation method and circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145690B2Oct 12, 2021

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127790B2Sep 21, 2021

Phase change memory structure and manufacturing method for the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11005040B2May 11, 2021

Low temperature film for PCRAM sidewall protection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10978148B1Apr 13, 2021

Hybrid sensing scheme compensating for cell resistance instability

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971223B2Apr 6, 2021

Phase change memory operation method and circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10950664B2Mar 16, 2021

Semiconductor memory device including phase change material layers and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10818349B2Oct 27, 2020

Programming method and reading method for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11152565B2Oct 19, 2021

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

ASUSTEK COMP INC

7 patents