Inventor
HALLIN CHRISTER
US21 patents
⚠️ This page may combine multiple inventors who share the name “HALLIN CHRISTER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
12 patentsUS7226805B2Jun 5, 2007
Sequential lithographic methods to reduce stacking fault nucleation sites
CREE INC231 citations98
US7109521B2Sep 19, 2006
Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
CREE INC23 citations92
US10892356B2Jan 12, 2021
Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
CREE INC9 citations86
US9306009B2Apr 5, 2016
Mix doping of a semi-insulating Group III nitride
CREE INC8 citations84
US10840334B2Nov 17, 2020
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
CREE INC2 citations73
US7601986B2Oct 13, 2009
Epitaxial semiconductor structures having reduced stacking fault nucleation sites
CREE INC6 citations73
US7173285B2Feb 6, 2007
Lithographic methods to reduce stacking fault nucleation sites
CREE INC7 citations73
US11862719B2Jan 2, 2024
Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
CREE INC0 citations62
US10192980B2Jan 29, 2019
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
CREE INC1 citations62
US7396410B2Jul 8, 2008
Featuring forming methods to reduce stacking fault nucleation sites
CREE INC4 citations62
US12557322B2Feb 17, 2026
Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof
CREE INC0 citations52
US9608085B2Mar 28, 2017
Predisposed high electron mobility transistor
CREE INC1 citations52
ABB RESEARCH LTD
6 patentsUS6093253AJul 25, 2000
Method and a device for epitaxial growth of objects by chemical vapor deposition
ABB RESEARCH LTD515 citations97
US5704985AJan 6, 1998
Device and a method for epitaxially growing objects by CVD
ABB RESEARCH LTD93 citations95
US6039812AMar 21, 2000
Device for epitaxially growing objects and method for such a growth
ABB RESEARCH LTD67 citations93
US6030661AFeb 29, 2000
Device and a method for epitaxially growing objects by CVD
ABB RESEARCH LTD36 citations92
US5792257AAug 11, 1998
Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
ABB RESEARCH LTD30 citations92
US6048398AApr 11, 2000
Device for epitaxially growing objects
ABB RESEARCH LTD43 citations89