P

Inventor

LU ZHONGYUAN

US25 patents
⚠️ This page may combine multiple inventors who share the name “LU ZHONGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

20 patents
US11456036B1Sep 27, 2022

Predicting and compensating for degradation of memory cells

MICRON TECHNOLOGY INC5 citations83
US11404130B1Aug 2, 2022

Evaluation of background leakage to select write voltage in memory devices

MICRON TECHNOLOGY INC5 citations73
US11244717B2Feb 8, 2022

Write operation techniques for memory systems

MICRON TECHNOLOGY INC4 citations72
US12525298B2Jan 13, 2026

Memory block characteristic determination

MICRON TECHNOLOGY INC0 citations62
US12525315B2Jan 13, 2026

Efficient read disturb scanning

MICRON TECHNOLOGY INC0 citations62
US12014784B2Jun 18, 2024

Evaluation of background leakage to select write voltage in memory devices

MICRON TECHNOLOGY INC0 citations62
US12002516B2Jun 4, 2024

Memory block characteristic determination

MICRON TECHNOLOGY INC1 citations62
US11875867B2Jan 16, 2024

Weighted wear leveling for improving uniformity

MICRON TECHNOLOGY INC1 citations62
US11735258B2Aug 22, 2023

Increase of a sense current in memory

MICRON TECHNOLOGY INC0 citations62
US11710517B2Jul 25, 2023

Write operation techniques for memory systems

MICRON TECHNOLOGY INC0 citations62
US11651825B2May 16, 2023

Random value generator

MICRON TECHNOLOGY INC0 citations62
US11568932B2Jan 31, 2023

Read cache for reset read disturb mitigation

MICRON TECHNOLOGY INC0 citations62
US11295811B2Apr 5, 2022

Increase of a sense current in memory

MICRON TECHNOLOGY INC0 citations62
US11823745B2Nov 21, 2023

Predicting and compensating for degradation of memory cells

MICRON TECHNOLOGY INC0 citations61
US11705195B2Jul 18, 2023

Increase of a sense current in memory

MICRON TECHNOLOGY INC0 citations61
US11211122B1Dec 28, 2021

Increase of a sense current in memory

MICRON TECHNOLOGY INC0 citations61
US11978513B2May 7, 2024

Generating patterns for memory threshold voltage difference

MICRON TECHNOLOGY INC0 citations51
US11762779B1Sep 19, 2023

Data block transfer with extended read buffering

MICRON TECHNOLOGY INC0 citations51
US12131778B2Oct 29, 2024

Triggering of stronger write pulses in a memory device based on prior read operations

MICRON TECHNOLOGY INC0 citations47
US11823761B2Nov 21, 2023

Pre-read in opposite polarity to evaluate read margin

MICRON TECHNOLOGY INC0 citations47

UNIV SW SCI & TECH SWUST

4 patents

CHINA TELECOM CO LTD

1 patent