Inventor
APPELS JOHANNES A
NL16 patents
Patents
16 patentsUS4292642ASep 29, 1981
Semiconductor device
PHILIPS CORP70 citations93
US4514251AApr 30, 1985
Method of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantation
PHILIPS CORP41 citations91
US4422089ADec 20, 1983
Semiconductor device having a reduced surface field strength
PHILIPS CORP50 citations90
US4750971AJun 14, 1988
Method of manufacturing a semiconductor device
PHILIPS CORP21 citations82
US4689872ASep 1, 1987
Method of manufacturing a semiconductor device
PHILIPS CORP21 citations82
US4659428AApr 21, 1987
Method of manufacturing a semiconductor device and semiconductor device manufactured by means of the method
PHILIPS CORP17 citations82
US4449287AMay 22, 1984
Method of providing a narrow groove or slot in a substrate region, in particular a semiconductor substrate region
PHILIPS CORP24 citations82
US4409606AOct 11, 1983
High breakdown voltage semiconductor device
PHILIPS CORP23 citations78
US5008209AApr 16, 1991
Method of manufacturing a semiconductor device including outdiffusion from polysilicon rims
PHILIPS CORP7 citations73
US4717689AJan 5, 1988
Method of forming semimicron grooves in semiconductor material
PHILIPS CORP16 citations73
US4619039AOct 28, 1986
Method of manufacturing a semiconductor device and device manufactured by the use of the method
PHILIPS CORP9 citations72
US4574468AMar 11, 1986
Method of manufacturing a semiconductor device having narrow coplanar silicon electrodes
PHILIPS CORP11 citations72
US4545110AOct 8, 1985
Method of manufacturing an insulated gate field effect device
PHILIPS CORP8 citations72
US4233617ANov 11, 1980
Field effect transistor with insulated gate electrode
PHILIPS CORP19 citations71
US4146905AMar 27, 1979
Semiconductor device having complementary transistor structures and method of manufacturing same
PHILIPS CORP19 citations67
US4636826AJan 13, 1987
Charge coupled devices having narrow coplanar silicon electrodes
PHILIPS CORP3 citations61