Inventor

YIN ZHIPING

US102 patents

⚠️ This page may combine multiple inventors who share the name “YIN ZHIPING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YIN ZHIPING

MICRON TECHNOLOGY INC

Passivation layer for packaged integrated circuits

Passivation layer for packaged integrated circuits

Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device

Pitch reduced patterns relative to photolithography features

Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures

Semiconductor processing methods of forming insulative materials

Pitch reduced patterns relative to photolithography features

Boron-doped amorphous carbon film for use as a hard etch mask during the formation of a semiconductor device

Dry low k film application for interlevel dielectric and method of cleaning etched features

Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby

Use of DAR coating to modulate the efficiency of laser fuse blows

Treatment for film surface to reduce photo footing

Anti-reflective coatings and methods for forming and using same

Surface treatment of DARC films to reduce defects in subsequent cap layers

Semiconductor processing methods

Treatment for film surface to reduce photo footing

Isolation using an antireflective coating

Plasma treatment of an interconnect surface during formation of an interlayer dielectric

Isolation using an antireflective coating

Semiconductor processing methods

Transparent amorphous carbon structure in semiconductor devices

Masking structure having multiple layers including an amorphous carbon layer

Masking methods

Antireflective coating for use during the manufacture of a semiconductor device

Low k film application for interlevel dielectric and method of cleaning etched features

Anti-reflective coatings and methods for forming and using same

Fabrication of semiconductor devices using anti-reflective coatings

Anti-reflective coatings and methods for forming and using same

Anti-reflective coatings and methods for forming and using same

Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions

Isolation using an antireflective coating

Isolation using an antireflective coating

Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby

Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby

Semiconductor devices with package-level configurability

Prevention of photoresist scumming

Low temperature nitride used as Cu barrier layer

Semiconductor processing methods, semiconductor circuitry, and gate stacks

Anti-reflective coatings and methods regarding same

Vertical 4-way shared pixel in a single column with internal reset and no row select

Masking structure having multiple layers including amorphous carbon layer

Prevention of photoresist scumming

Semiconductor devices with package-level configurability

TRAN LUAN

Integrated circuit having pitch reduced patterns relative to photoithography features

Pitch reduced patterns relative to photolithography features

Pitch reduced patterns relative to photolithography features

APTINA IMAGING CORP

Method and apparatus providing shared pixel straight gate architecture

Method and apparatus providing shared pixel architecture

ROUND ROCK RES LLC

Pitch reduced patterns relative to photolithography features

Pitch reduced patterns relative to photolithography features