Inventor

PARK YONG-BO

KR8 patents

⚠️ This page may combine multiple inventors who share the name “PARK YONG-BO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents

US5349559ASep 20, 1994

Internal voltage generating circuit

SAMSUNG ELECTRONICS CO LTD69 citations95

US5311076AMay 10, 1994

Tristate data output buffer having reduced switching noise and intermediate-level setting

SAMSUNG ELECTRONICS CO LTD36 citations92

US5396113AMar 7, 1995

SAMSUNG SEMICONDUCTOR

1 patent

US5067109ANov 19, 1991

Data output buffer circuit for a SRAM

SAMSUNG SEMICONDUCTOR14 citations71

PARK YONG-BO

SAMSUNG ELECTRONICS CO LTD

Internal voltage generating circuit

Tristate data output buffer having reduced switching noise and intermediate-level setting

Electrically programmable internal power voltage generating circuit

Input translating circuit for CMOS device

Write driver having a precharging means

CMOS input buffer stable for the variation of a power supplying voltage

High speed level converter to convert a TTL logic signal to a CMOS logic signal

SAMSUNG SEMICONDUCTOR

Data output buffer circuit for a SRAM