Inventor

ENDOH TETSUO

JP116 patents

⚠️ This page may combine multiple inventors who share the name “ENDOH TETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ENDOH TETSUO

TOSHIBA KK

Non-volatile semiconductor memory device

Non-volatile semiconductor memory device

Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state

Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

Non-volatile semiconductor memory device

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

Non-volatile semiconductor memory device

Semiconductor device having inversion inducing gate

Semiconductor device having inversion inducing gate

Semiconductor memory device

Electrically erasable programmable read-only memory with an array of one-transistor memory cells

Electrically erasable programmable read-only memory with an array of one-transistor memory cells

Electrically erasable programmable read-only memory with an array of one-transistor memory cells

Electrically erasable programmable read-only memory with NAND memory cell structure

Electrically erasable programmable read-only memory with NAND memory cell structure

Non-volatile semiconductor memory and method of manufacturing the same

Non-volatile semiconductor memory and method of manufacturing the same

Non-volatile semiconductor memory device with voltage stabilizing electrode

Method of manufacturing NAND type EEPROM

UNIV TOHOKU

Integrated circuit

Magnetoresistance effect element and magnetic memory device

Storage circuit provided with variable resistance type elements, and its test device

Integrated circuit device

Memory circuit provided with variable-resistance element

Magnetic tunnel junction element and magnetic memory

Magnetic tunnel junction element and magnetic memory

Data-write device for resistance-change memory element

Memory device and memory system

Tunnel junction laminated film, magnetic memory element, and magnetic memory

Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system

Magnetoresistance effect element and magnetic memory

Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect element

Method of manufacturing magnetic tunnel coupling element

Magnetoresistive element and magnetic memory

MASUOKA FUJIO

Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer

Semiconductor memory and its production process

Process of manufacturing electron microscopic sample and process of analyzing semiconductor device

SHARP KK

Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer

Semiconductor memory and its production process

Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same

SK HYNIX INC

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

ENDOH TETSUO

MOS semiconductor memory device having charge storage region formed from stack of insulating films

Semiconductor memory device and manufacturing method for the same

FUJIO MASUOKA

Semiconductor memory device and its production process

NEC CORP

Nonvolatile logic gate device

SHARP SEMICONDUCTOR INNOVATION CORP

Memory device with pipelined access