Inventor
CAVE NIGEL G
US15 patents
⚠️ This page may combine multiple inventors who share the name “CAVE NIGEL G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
7 patentsUS9947589B1Apr 17, 2018
Methods of forming a gate contact for a transistor above an active region and the resulting device
GLOBALFOUNDRIES INC8 citations84
US10381459B2Aug 13, 2019
Transistors with H-shaped or U-shaped channels and method for forming the same
GLOBALFOUNDRIES INC6 citations73
US10290549B2May 14, 2019
Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same
GLOBALFOUNDRIES INC6 citations73
US10204994B2Feb 12, 2019
Methods of forming a semiconductor device with a gate contact positioned above the active region
GLOBALFOUNDRIES INC4 citations73
US9978608B2May 22, 2018
Fin patterning for a fin-type field-effect transistor
GLOBALFOUNDRIES INC3 citations73
US10734525B2Aug 4, 2020
Gate-all-around transistor with spacer support and methods of forming same
GLOBALFOUNDRIES INC2 citations72
US10504790B2Dec 10, 2019
Methods of forming conductive spacers for gate contacts and the resulting device
GLOBALFOUNDRIES INC0 citations42
FREESCALE SEMICONDUCTOR INC
5 patentsUS7109051B2Sep 19, 2006
Method of integrating optical devices and electronic devices on an integrated circuit
FREESCALE SEMICONDUCTOR INC20 citations92
US6924184B2Aug 2, 2005
Semiconductor device and method for forming a semiconductor device using post gate stack planarization
FREESCALE SEMICONDUCTOR INC27 citations89
US7262105B2Aug 28, 2007
Semiconductor device with silicided source/drains
FREESCALE SEMICONDUCTOR INC13 citations79
US7144784B2Dec 5, 2006
Method of forming a semiconductor device and structure thereof
FREESCALE SEMICONDUCTOR INC9 citations73
US7067342B2Jun 27, 2006
Method of integrating optical devices and electronic devices on an integrated circuit
FREESCALE SEMICONDUCTOR INC9 citations73