Inventor
PARKIN STUART S P
US44 patents
⚠️ This page may combine multiple inventors who share the name “PARKIN STUART S P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
35 patentsUS7031178B2Apr 18, 2006
Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
IBM124 citations99
US6834005B1Dec 21, 2004
Shiftable magnetic shift register and method of using the same
IBM349 citations99
US7236386B2Jun 26, 2007
System and method for transferring data to and from a magnetic shift register with a shiftable data column
IBM91 citations98
US6920062B2Jul 19, 2005
System and method for reading data stored on a magnetic shift register
IBM83 citations98
US6898132B2May 24, 2005
System and method for writing to a magnetic shift register
IBM106 citations98
US5465185ANov 7, 1995
Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
IBM358 citations98
US5408377AApr 18, 1995
Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
IBM289 citations98
US5206590AApr 27, 1993
Magnetoresistive sensor based on the spin valve effect
IBM477 citations98
US5159513AOct 27, 1992
Magnetoresistive sensor based on the spin valve effect
IBM268 citations98
US6518588B1Feb 11, 2003
Magnetic random access memory with thermally stable magnetic tunnel junction cells
IBM141 citations97
US6538919B1Mar 25, 2003
Magnetic tunnel junctions using ferrimagnetic materials
IBM74 citations96
US5585986ADec 17, 1996
Digital magnetoresistive sensor based on the giant magnetoresistance effect
IBM96 citations96
US5583727ADec 10, 1996
Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor
IBM96 citations96
US5341261AAug 23, 1994
Magnetoresistive sensor having multilayer thin film structure
IBM56 citations96
US5014147AMay 7, 1991
Magnetoresistive sensor with improved antiferromagnetic film
IBM53 citations95
US5341118AAug 23, 1994
Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness
IBM56 citations94
US7416905B2Aug 26, 2008
Method of fabricating a magnetic shift register
IBM17 citations93
US7315470B2Jan 1, 2008
Data storage device and associated method for writing data to, and reading data from an unpatterned magnetic layer
IBM24 citations93
US7108797B2Sep 19, 2006
Method of fabricating a shiftable magnetic shift register
IBM37 citations93
US6970379B2Nov 29, 2005
System and method for storing data in an unpatterned, continuous magnetic layer
IBM36 citations93
US6955926B2Oct 18, 2005
Method of fabricating data tracks for use in a magnetic shift register memory device
IBM37 citations93
US5598308AJan 28, 1997
Magnetoresistive sensor having multilayer thin film structure
IBM39 citations92
US4870052ASep 26, 1989
Tl-Ca-Ba-Cu-O compositions electrically superconducting above 120 degree K and processes for their preparation
IBM38 citations91
US10396123B2Aug 27, 2019
Templating layers for perpendicularly magnetized Heusler films
IBM9 citations84
US10177305B2Jan 8, 2019
Templating layers for perpendicularly magnetized heusler films
IBM12 citations84
US10170696B1Jan 1, 2019
MnN and Heusler layers in magnetic tunnel junctions
IBM6 citations84
US7598097B2Oct 6, 2009
Method of fabricating a magnetic shift register
IBM11 citations84
US9406365B1Aug 2, 2016
Underlayers for textured films of Heusler compounds
IBM4 citations73
US10957848B2Mar 23, 2021
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM3 citations71
US10247701B2Apr 2, 2019
Dissolved-oxygen sensor utilizing ionic oxygen motion
IBM2 citations71
US9666215B2May 30, 2017
Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
IBM2 citations68
US11557721B2Jan 17, 2023
Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)
IBM0 citations61
US4988668AJan 29, 1991
Ti-Ca-Ba-Cu-D compositions electrically superconducting above 120 degrees K and processes for their preparation
IBM6 citations61
US9704551B2Jul 11, 2017
Magnetic tunnel junction switching assisted by temperature-gradient induced spin torque
IBM0 citations50
US10256490B2Apr 9, 2019
Oxygen-separating device utilizing ionic oxygen motion
IBM0 citations40
SAMSUNG ELECTRONICS CO LTD
5 patentsUS9761793B1Sep 12, 2017
Magnetic memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US11005029B2May 11, 2021
Spin transfer torque switching of a magnetic layer with volume uniaxial magnetic crystalline anistotropy
SAMSUNG ELECTRONICS CO LTD5 citations72
US10937953B2Mar 2, 2021
Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR
SAMSUNG ELECTRONICS CO LTD3 citations72
US10651234B2May 12, 2020
Templating layers for forming highly textured thin films of heusler compounds switchable by application of spin transfer torque
SAMSUNG ELECTRONICS CO LTD2 citations72
US9831422B2Nov 28, 2017
Magnetic memory devices having perpendicular magnetic tunnel junction
SAMSUNG ELECTRONICS CO LTD0 citations52