P

Inventor

PARKIN STUART S P

US44 patents
⚠️ This page may combine multiple inventors who share the name “PARKIN STUART S P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

35 patents
US7031178B2Apr 18, 2006

Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same

IBM124 citations99
US6834005B1Dec 21, 2004

Shiftable magnetic shift register and method of using the same

IBM349 citations99
US7236386B2Jun 26, 2007

System and method for transferring data to and from a magnetic shift register with a shiftable data column

IBM91 citations98
US6920062B2Jul 19, 2005

System and method for reading data stored on a magnetic shift register

IBM83 citations98
US6898132B2May 24, 2005

System and method for writing to a magnetic shift register

IBM106 citations98
US5465185ANov 7, 1995

Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor

IBM358 citations98
US5408377AApr 18, 1995

Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor

IBM289 citations98
US5206590AApr 27, 1993

Magnetoresistive sensor based on the spin valve effect

IBM477 citations98
US5159513AOct 27, 1992

Magnetoresistive sensor based on the spin valve effect

IBM268 citations98
US6518588B1Feb 11, 2003

Magnetic random access memory with thermally stable magnetic tunnel junction cells

IBM141 citations97
US6538919B1Mar 25, 2003

Magnetic tunnel junctions using ferrimagnetic materials

IBM74 citations96
US5585986ADec 17, 1996

Digital magnetoresistive sensor based on the giant magnetoresistance effect

IBM96 citations96
US5583727ADec 10, 1996

Multiple data layer magnetic recording data storage system with digital magnetoresistive read sensor

IBM96 citations96
US5341261AAug 23, 1994

Magnetoresistive sensor having multilayer thin film structure

IBM56 citations96
US5014147AMay 7, 1991

Magnetoresistive sensor with improved antiferromagnetic film

IBM53 citations95
US5341118AAug 23, 1994

Multilayer magnetic structure wherein the magnitude of the structure magnetoresistance is a function of nonmagnetic layer thickness

IBM56 citations94
US7416905B2Aug 26, 2008

Method of fabricating a magnetic shift register

IBM17 citations93
US7315470B2Jan 1, 2008

Data storage device and associated method for writing data to, and reading data from an unpatterned magnetic layer

IBM24 citations93
US7108797B2Sep 19, 2006

Method of fabricating a shiftable magnetic shift register

IBM37 citations93
US6970379B2Nov 29, 2005

System and method for storing data in an unpatterned, continuous magnetic layer

IBM36 citations93
US6955926B2Oct 18, 2005

Method of fabricating data tracks for use in a magnetic shift register memory device

IBM37 citations93
US5598308AJan 28, 1997

Magnetoresistive sensor having multilayer thin film structure

IBM39 citations92
US4870052ASep 26, 1989

Tl-Ca-Ba-Cu-O compositions electrically superconducting above 120 degree K and processes for their preparation

IBM38 citations91
US10396123B2Aug 27, 2019

Templating layers for perpendicularly magnetized Heusler films

IBM9 citations84
US10177305B2Jan 8, 2019

Templating layers for perpendicularly magnetized heusler films

IBM12 citations84
US10170696B1Jan 1, 2019

MnN and Heusler layers in magnetic tunnel junctions

IBM6 citations84
US7598097B2Oct 6, 2009

Method of fabricating a magnetic shift register

IBM11 citations84
US9406365B1Aug 2, 2016

Underlayers for textured films of Heusler compounds

IBM4 citations73
US10957848B2Mar 23, 2021

Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)

IBM3 citations71
US10247701B2Apr 2, 2019

Dissolved-oxygen sensor utilizing ionic oxygen motion

IBM2 citations71
US9666215B2May 30, 2017

Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy

IBM2 citations68
US11557721B2Jan 17, 2023

Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)

IBM0 citations61
US4988668AJan 29, 1991

Ti-Ca-Ba-Cu-D compositions electrically superconducting above 120 degrees K and processes for their preparation

IBM6 citations61
US9704551B2Jul 11, 2017

Magnetic tunnel junction switching assisted by temperature-gradient induced spin torque

IBM0 citations50
US10256490B2Apr 9, 2019

Oxygen-separating device utilizing ionic oxygen motion

IBM0 citations40

SAMSUNG ELECTRONICS CO LTD

5 patents

JOSEPH ERIC A

2 patents

INTERNAT BUSINESSS MACHINES CORP

1 patent

MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WSS EV

1 patent