P

Inventor

YEO IN SEOK

KR50 patents
⚠️ This page may combine multiple inventors who share the name “YEO IN SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US7419888B2Sep 2, 2008

Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD71 citations97
US7148106B2Dec 12, 2006

Methods of fabricating non-volatile memory devices including nanocrystals

SAMSUNG ELECTRONICS CO LTD27 citations92
US7368788B2May 6, 2008

SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions

SAMSUNG ELECTRONICS CO LTD33 citations91
US7338862B2Mar 4, 2008

Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure

SAMSUNG ELECTRONICS CO LTD40 citations91
US7982256B2Jul 19, 2011

Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof

SAMSUNG ELECTRONICS CO LTD14 citations83
US7482206B2Jan 27, 2009

Semiconductor devices having nano-line channels and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations82
US7344773B2Mar 18, 2008

Methods of forming nanoparticle based monolayer films with high particle density and devices including the same

SAMSUNG ELECTRONICS CO LTD11 citations80
US7659624B2Feb 9, 2010

Semiconductor device having a nanoscale conductive structure

SAMSUNG ELECTRONICS CO LTD10 citations79
US7384841B2Jun 10, 2008

DRAM device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations72
US7875920B2Jan 25, 2011

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7560383B2Jul 14, 2009

Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7354823B2Apr 8, 2008

Methods of forming integrated circuit devices having carbon nanotube electrodes therein

SAMSUNG ELECTRONICS CO LTD4 citations62
US7795659B2Sep 14, 2010

DRAM device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US7915668B2Mar 29, 2011

Semiconductor device and method for forming the same

SAMSUNG ELECTRONICS CO LTD2 citations59
US7799633B2Sep 21, 2010

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7651904B2Jan 26, 2010

Methods of fabricating non-volatile memory devices including nanocrystals

SAMSUNG ELECTRONICS CO LTD0 citations52
US7535778B2May 19, 2009

Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7863138B2Jan 4, 2011

Methods of forming nano line structures in microelectronic devices

SAMSUNG ELECTRONICS CO LTD0 citations51
US7274066B2Sep 25, 2007

Semiconductor memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations41

HYUNDAI ELECTRONICS IND

13 patents
US6281054B1Aug 28, 2001

SOI device and method for fabricating the same

HYUNDAI ELECTRONICS IND37 citations93
US6180985B1Jan 30, 2001

SOI device and method for fabricating the same

HYUNDAI ELECTRONICS IND33 citations93
US6261911B1Jul 17, 2001

Method of manufacturing a junction in a semiconductor device

HYUNDAI ELECTRONICS IND46 citations92
US6340629B1Jan 22, 2002

Method for forming gate electrodes of semiconductor device using a separated WN layer

HYUNDAI ELECTRONICS IND65 citations91
US6468914B1Oct 22, 2002

Method of forming gate electrode in semiconductor device

HYUNDAI ELECTRONICS IND11 citations74
US6303494B1Oct 16, 2001

Method of forming gate electrode in semiconductor device

HYUNDAI ELECTRONICS IND10 citations74
US6281085B1Aug 28, 2001

Method of manufacturing a semiconductor device

HYUNDAI ELECTRONICS IND8 citations74
US6218252B1Apr 17, 2001

Method of forming gate in semiconductor device

HYUNDAI ELECTRONICS IND10 citations74
US6165884ADec 26, 2000

Method of forming gate electrode in semiconductor device

HYUNDAI ELECTRONICS IND15 citations74
US6255206B1Jul 3, 2001

Method of forming gate electrode with titanium polycide structure

HYUNDAI ELECTRONICS IND11 citations73
US6420241B2Jul 16, 2002

Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process

HYUNDAI ELECTRONICS IND3 citations62
US6107144AAug 22, 2000

Method for forming field oxide of semiconductor device and the semiconductor device

HYUNDAI ELECTRONICS IND2 citations62
US6387788B2May 14, 2002

Method for forming polycide gate electrode of metal oxide semiconductor field effect transistor

HYUNDAI ELECTRONICS IND0 citations42

HYNIX SEMICONDUCTOR INC

9 patents

HUO ZONG-LIANG

3 patents

KOLAKE SUBRAMANYA MAYYA

1 patent

WANG XIANFENG

1 patent

HUO ZONGLIANG

1 patent

KIM MYUNG-JONG

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent

BYEON JEONG-HOON

1 patent