Inventor
YEO IN SEOK
KR50 patents
⚠️ This page may combine multiple inventors who share the name “YEO IN SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7419888B2Sep 2, 2008
Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD71 citations97
US7148106B2Dec 12, 2006
Methods of fabricating non-volatile memory devices including nanocrystals
SAMSUNG ELECTRONICS CO LTD27 citations92
US7368788B2May 6, 2008
SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions
SAMSUNG ELECTRONICS CO LTD33 citations91
US7338862B2Mar 4, 2008
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
SAMSUNG ELECTRONICS CO LTD40 citations91
US7982256B2Jul 19, 2011
Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof
SAMSUNG ELECTRONICS CO LTD14 citations83
US7482206B2Jan 27, 2009
Semiconductor devices having nano-line channels and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations82
US7344773B2Mar 18, 2008
Methods of forming nanoparticle based monolayer films with high particle density and devices including the same
SAMSUNG ELECTRONICS CO LTD11 citations80
US7659624B2Feb 9, 2010
Semiconductor device having a nanoscale conductive structure
SAMSUNG ELECTRONICS CO LTD10 citations79
US7384841B2Jun 10, 2008
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US7875920B2Jan 25, 2011
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7560383B2Jul 14, 2009
Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7354823B2Apr 8, 2008
Methods of forming integrated circuit devices having carbon nanotube electrodes therein
SAMSUNG ELECTRONICS CO LTD4 citations62
US7795659B2Sep 14, 2010
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7915668B2Mar 29, 2011
Semiconductor device and method for forming the same
SAMSUNG ELECTRONICS CO LTD2 citations59
US7799633B2Sep 21, 2010
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7651904B2Jan 26, 2010
Methods of fabricating non-volatile memory devices including nanocrystals
SAMSUNG ELECTRONICS CO LTD0 citations52
US7535778B2May 19, 2009
Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7863138B2Jan 4, 2011
Methods of forming nano line structures in microelectronic devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US7274066B2Sep 25, 2007
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
HYUNDAI ELECTRONICS IND
13 patentsUS6281054B1Aug 28, 2001
SOI device and method for fabricating the same
HYUNDAI ELECTRONICS IND37 citations93
US6180985B1Jan 30, 2001
SOI device and method for fabricating the same
HYUNDAI ELECTRONICS IND33 citations93
US6261911B1Jul 17, 2001
Method of manufacturing a junction in a semiconductor device
HYUNDAI ELECTRONICS IND46 citations92
US6340629B1Jan 22, 2002
Method for forming gate electrodes of semiconductor device using a separated WN layer
HYUNDAI ELECTRONICS IND65 citations91
US6468914B1Oct 22, 2002
Method of forming gate electrode in semiconductor device
HYUNDAI ELECTRONICS IND11 citations74
US6303494B1Oct 16, 2001
Method of forming gate electrode in semiconductor device
HYUNDAI ELECTRONICS IND10 citations74
US6281085B1Aug 28, 2001
Method of manufacturing a semiconductor device
HYUNDAI ELECTRONICS IND8 citations74
US6218252B1Apr 17, 2001
Method of forming gate in semiconductor device
HYUNDAI ELECTRONICS IND10 citations74
US6165884ADec 26, 2000
Method of forming gate electrode in semiconductor device
HYUNDAI ELECTRONICS IND15 citations74
US6255206B1Jul 3, 2001
Method of forming gate electrode with titanium polycide structure
HYUNDAI ELECTRONICS IND11 citations73
US6420241B2Jul 16, 2002
Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process
HYUNDAI ELECTRONICS IND3 citations62
US6107144AAug 22, 2000
Method for forming field oxide of semiconductor device and the semiconductor device
HYUNDAI ELECTRONICS IND2 citations62
US6387788B2May 14, 2002
Method for forming polycide gate electrode of metal oxide semiconductor field effect transistor
HYUNDAI ELECTRONICS IND0 citations42
HYNIX SEMICONDUCTOR INC
9 patentsUS6506676B2Jan 14, 2003
Method of manufacturing semiconductor devices with titanium aluminum nitride work function
HYNIX SEMICONDUCTOR INC98 citations98
US6537901B2Mar 25, 2003
Method of manufacturing a transistor in a semiconductor device
HYNIX SEMICONDUCTOR INC146 citations97
US6828185B2Dec 7, 2004
CMOS of semiconductor device and method for manufacturing the same
HYNIX SEMICONDUCTOR INC20 citations93
US6451639B1Sep 17, 2002
Method for forming a gate in a semiconductor device
HYNIX SEMICONDUCTOR INC27 citations93
US6436775B2Aug 20, 2002
MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness
HYNIX SEMICONDUCTOR INC22 citations93
US6417055B2Jul 9, 2002
Method for forming gate electrode for a semiconductor device
HYNIX SEMICONDUCTOR INC30 citations93
US6514827B2Feb 4, 2003
Method for fabricating a dual metal gate for a semiconductor device
HYNIX SEMICONDUCTOR INC38 citations92
US7528042B2May 5, 2009
Method for fabricating semiconductor devices having dual gate oxide layer
HYNIX SEMICONDUCTOR INC4 citations63
US7157339B2Jan 2, 2007
Method for fabricating semiconductor devices having dual gate oxide layers
HYNIX SEMICONDUCTOR INC3 citations63
HUO ZONG-LIANG
3 patentsUS8084316B2Dec 27, 2011
Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG18 citations90
US8269268B2Sep 18, 2012
Charge trap flash memory device and memory card and system including the same
HUO ZONG-LIANG7 citations82
US8405137B2Mar 26, 2013
Single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG3 citations60