Inventor
TROUILLOUD PHILIP L
US30 patents
⚠️ This page may combine multiple inventors who share the name “TROUILLOUD PHILIP L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
27 patentsUS6385082B1May 7, 2002
Thermally-assisted magnetic random access memory (MRAM)
IBM335 citations99
US6724674B2Apr 20, 2004
Memory storage device with heating element
IBM64 citations96
US6538919B1Mar 25, 2003
Magnetic tunnel junctions using ferrimagnetic materials
IBM74 citations96
US9495627B1Nov 15, 2016
Magnetic tunnel junction based chip identification
IBM14 citations92
US6667897B1Dec 23, 2003
Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer
IBM23 citations92
US8835889B1Sep 16, 2014
Parallel shunt paths in thermally assisted magnetic memory cells
IBM10 citations84
US7133309B2Nov 7, 2006
Method and structure for generating offset fields for use in MRAM devices
IBM8 citations74
US7102916B2Sep 5, 2006
Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
IBM8 citations74
US9917247B2Mar 13, 2018
Structure for thermally assisted MRAM
IBM3 citations72
US5392169AFeb 21, 1995
Electrical means to diminish read-back signal waveform distortion in recording heads
IBM11 citations72
US9569712B1Feb 14, 2017
Magnetic tunnel junction based chip identification
IBM1 citations63
US7622784B2Nov 24, 2009
MRAM device with improved stack structure and offset field for low-power toggle mode writing
IBM2 citations63
US7330371B2Feb 12, 2008
Method and structure for generating offset fields for use in MRAM devices
IBM4 citations63
US6623158B2Sep 23, 2003
Method and apparatus for thermal proximity imaging using pulsed energy
IBM4 citations63
US7782660B2Aug 24, 2010
Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
IBM5 citations62
US7536612B2May 19, 2009
Field spike monitor for MRAM
IBM2 citations62
US9705500B2Jul 11, 2017
Magnetic tunnel junction based chip identification
IBM0 citations52
US9576634B1Feb 21, 2017
Magnetic tunnel junction based chip identification
IBM0 citations52
US9214625B2Dec 15, 2015
Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrier
IBM1 citations52
US8971103B2Mar 3, 2015
Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization
IBM0 citations52
US8908425B2Dec 9, 2014
Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization
IBM0 citations52
US7477567B2Jan 13, 2009
Memory storage device with heating element
IBM1 citations52
US10236438B2Mar 19, 2019
Multibit self-reference thermally assisted MRAM
IBM0 citations51
US9786836B2Oct 10, 2017
Multibit self-reference thermally assisted MRAM
IBM0 citations51
US9786837B2Oct 10, 2017
Multibit self-reference thermally assisted MRAM
IBM0 citations51
US9515251B2Dec 6, 2016
Structure for thermally assisted MRAM
IBM0 citations51
US9406870B2Aug 2, 2016
Multibit self-reference thermally assisted MRAM
IBM0 citations51