P

Inventor

SEITZ MIHEL

US18 patents
⚠️ This page may combine multiple inventors who share the name “SEITZ MIHEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

12 patents
US6531377B2Mar 11, 2003

Method for high aspect ratio gap fill using sequential HDP-CVD

INFINEON TECHNOLOGIES AG211 citations99
US6849496B2Feb 1, 2005

DRAM with vertical transistor and trench capacitor memory cells and method of fabrication

INFINEON TECHNOLOGIES AG90 citations98
US6706634B1Mar 16, 2004

Control of separation between transfer gate and storage node in vertical DRAM

INFINEON TECHNOLOGIES AG39 citations92
US6724054B1Apr 20, 2004

Self-aligned contact formation using double SiN spacers

INFINEON TECHNOLOGIES AG16 citations84
US6667223B2Dec 23, 2003

High aspect ratio high density plasma (HDP) oxide gapfill method in a lines and space pattern

INFINEON TECHNOLOGIES AG17 citations84
US6383691B1May 7, 2002

Photomask and method for increasing image aspect ratio while relaxing mask fabrication requirements

INFINEON TECHNOLOGIES AG17 citations84
US6716734B2Apr 6, 2004

Low temperature sidewall oxidation of W/WN/poly-gatestack

INFINEON TECHNOLOGIES AG7 citations74
US6621112B2Sep 16, 2003

DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication

INFINEON TECHNOLOGIES AG8 citations74
US7034352B2Apr 25, 2006

DRAM with very shallow trench isolation

INFINEON TECHNOLOGIES AG4 citations63
US6759292B2Jul 6, 2004

Method for fabricating a trench capacitor

INFINEON TECHNOLOGIES AG5 citations63
US6794282B2Sep 21, 2004

Three layer aluminum deposition process for high aspect ratio CL contacts

INFINEON TECHNOLOGIES AG3 citations62
US7105404B2Sep 12, 2006

Method for fabricating a semiconductor structure

INFINEON TECHNOLOGIES AG0 citations41

IBM

4 patents

INFINEON TECHNOLOGIES CORP

1 patent

INFINEON TECHNOLOGIES

1 patent