Inventor
NAKOS JAMES S
US50 patents
⚠️ This page may combine multiple inventors who share the name “NAKOS JAMES S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
36 patentsUS6054745AApr 25, 2000
Nonvolatile memory cell using microelectromechanical device
IBM114 citations98
US5268330ADec 7, 1993
Process for improving sheet resistance of an integrated circuit device gate
IBM131 citations98
US6373095B1Apr 16, 2002
NVRAM cell having increased coupling ratio between a control gate and floating gate without an increase in cell area
IBM56 citations96
US5431777AJul 11, 1995
Methods and compositions for the selective etching of silicon
IBM110 citations96
US5226732AJul 13, 1993
Emissivity independent temperature measurement systems
IBM85 citations94
US6022770AFeb 8, 2000
NVRAM utilizing high voltage TFT device and method for making the same
IBM25 citations93
US7138691B2Nov 21, 2006
Selective nitridation of gate oxides
IBM31 citations92
US7067368B1Jun 27, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM17 citations92
US7045372B2May 16, 2006
Apparatus and method for forming a battery in an integrated circuit
IBM31 citations92
US6780720B2Aug 24, 2004
Method for fabricating a nitrided silicon-oxide gate dielectric
IBM37 citations92
US6650000B2Nov 18, 2003
Apparatus and method for forming a battery in an integrated circuit
IBM37 citations92
US5185294AFeb 9, 1993
Boron out-diffused surface strap process
IBM42 citations92
US6967167B2Nov 22, 2005
Silicon dioxide removing method
IBM16 citations84
US6256755B1Jul 3, 2001
Apparatus and method for detecting defective NVRAM cells
IBM16 citations84
US6221704B1Apr 24, 2001
Process for fabricating short channel field effect transistor with a highly conductive gate
IBM19 citations84
US7291568B2Nov 6, 2007
Method for fabricating a nitrided silicon-oxide gate dielectric
IBM13 citations81
US5565060AOct 15, 1996
Methods and compositions for the selective etching of silicon
IBM17 citations81
US7112481B2Sep 26, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM5 citations74
US6339015B1Jan 15, 2002
Method of fabricating a non-volatile semiconductor device
IBM7 citations74
US5691549ANov 25, 1997
Sidewall strap
IBM15 citations74
US7759260B2Jul 20, 2010
Selective nitridation of gate oxides
IBM5 citations73
US6706644B2Mar 16, 2004
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors
IBM7 citations72
US7064025B1Jun 20, 2006
Method for forming self-aligned dual salicide in CMOS technologies
IBM4 citations63
US6232633B1May 15, 2001
NVRAM cell using sharp tip for tunnel erase
IBM2 citations63
US5521118AMay 28, 1996
Sidewall strap
IBM4 citations63
US7897473B2Mar 1, 2011
Method of manufacturing a dual contact trench capacitor
IBM2 citations61
US7759189B2Jul 20, 2010
Method of manufacturing a dual contact trench capacitor
IBM3 citations61
US8658435B2Feb 25, 2014
Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
IBM2 citations60
US8796044B2Aug 5, 2014
Ferroelectric random access memory with optimized hardmask
IBM3 citations58
US9269787B2Feb 23, 2016
Base profile of self-aligned bipolar transistors for power amplifier applications
IBM0 citations52
US9105677B2Aug 11, 2015
Base profile of self-aligned bipolar transistors for power amplifier applications
IBM1 citations52
US8044764B2Oct 25, 2011
Resistor and design structure having resistor material length with sub-lithographic width
IBM0 citations52
US8741729B2Jun 3, 2014
Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture
IBM1 citations51
US8384140B2Feb 26, 2013
Structure for dual contact trench capacitor and structure thereof
IBM1 citations51
US6909157B2Jun 21, 2005
Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors
IBM0 citations51
US9646125B2May 9, 2017
Method for conversion of commercial microprocessor to radiation-hardened processor and resulting processor
IBM0 citations41
KEMERER TIMOTHY W
5 patentsUS8143135B2Mar 27, 2012
Embedded series deep trench capacitors and methods of manufacture
KEMERER TIMOTHY W12 citations82
US8614137B2Dec 24, 2013
Dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture
KEMERER TIMOTHY W2 citations61
US8441103B2May 14, 2013
Embedded series deep trench capacitors and methods of manufacture
KEMERER TIMOTHY W2 citations61
US8546243B2Oct 1, 2013
Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture
KEMERER TIMOTHY W1 citations50
US8198663B2Jun 12, 2012
Structure for dual contact trench capacitor and structure thereof
KEMERER TIMOTHY W0 citations50