Inventor

HUANG KUO-SU

TW7 patents

Patents

7 patents

US6475870B1Nov 5, 2002

P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture

TAIWAN SEMICONDUCTOR MFG43 citations95

US6770951B2Aug 3, 2004

P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture

TAIWAN SEMICONDUCTOR MFG19 citations92

US6580131B2Jun 17, 2003

LDMOS device with double N-layering and process for its manufacture

TAIWAN SEMICONDUCTOR MFG16 citations92

US6486034B1Nov 26, 2002

Method of forming LDMOS device with double N-layering

TAIWAN SEMICONDUCTOR MFG25 citations92

US6682659B1Jan 27, 2004

Method for forming corrosion inhibited conductor layer

TAIWAN SEMICONDUCTOR MFG57 citations91

US6348371B1Feb 19, 2002

Method of forming self-aligned twin wells

TAIWAN SEMICONDUCTOR MFG13 citations73

US6770138B2Aug 3, 2004

Pattern for monitoring epitaxial layer washout

TAIWAN SEMICONDUCTOR MFG0 citations51