P

Inventor

GOODNER MICHAEL D

US50 patents
⚠️ This page may combine multiple inventors who share the name “GOODNER MICHAEL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

45 patents
US6946384B2Sep 20, 2005

Stacked device underfill and a method of fabrication

INTEL CORP235 citations99
US6876017B2Apr 5, 2005

Polymer sacrificial light absorbing structure and method

INTEL CORP542 citations99
US6566280B1May 20, 2003

Forming polymer features on a substrate

INTEL CORP297 citations99
US7018918B2Mar 28, 2006

Method of forming a selectively converted inter-layer dielectric using a porogen material

INTEL CORP76 citations97
US7125582B2Oct 24, 2006

Low-temperature silicon nitride deposition

INTEL CORP57 citations96
US7071091B2Jul 4, 2006

Method of forming air gaps in a dielectric material using a sacrificial film

INTEL CORP50 citations96
US6737365B1May 18, 2004

Forming a porous dielectric layer

INTEL CORP61 citations95
US7303989B2Dec 4, 2007

Using zeolites to improve the mechanical strength of low-k interlayer dielectrics

INTEL CORP22 citations93
US7294568B2Nov 13, 2007

Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures

INTEL CORP22 citations93
US6924222B2Aug 2, 2005

Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide

INTEL CORP32 citations93
US6893985B2May 17, 2005

UV-activated dielectric layer

INTEL CORP40 citations93
US6858528B2Feb 22, 2005

Composite sacrificial material

INTEL CORP17 citations93
US7169715B2Jan 30, 2007

Forming a dielectric layer using porogens

INTEL CORP18 citations92
US6991893B2Jan 31, 2006

Controlling resist profiles through substrate modification

INTEL CORP20 citations92
US7241707B2Jul 10, 2007

Layered films formed by controlled phase segregation

INTEL CORP22 citations90
US7595555B2Sep 29, 2009

Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures

INTEL CORP13 citations84
US7466025B2Dec 16, 2008

Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide

INTEL CORP12 citations84
US7365375B2Apr 29, 2008

Organic-framework zeolite interlayer dielectrics

INTEL CORP10 citations84
US7344972B2Mar 18, 2008

Photosensitive dielectric layer

INTEL CORP16 citations84
US7018920B2Mar 28, 2006

Composite sacrificial material

INTEL CORP12 citations84
US7732936B2Jun 8, 2010

Buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer

INTEL CORP6 citations74
US7157755B2Jan 2, 2007

Polymer sacrificial light absorbing structure and method

INTEL CORP7 citations74
US7101798B2Sep 5, 2006

Method to modulate etch rate in SLAM

INTEL CORP8 citations74
US7030040B2Apr 18, 2006

Selectively growing a polymeric material on a semiconductor substrate

INTEL CORP6 citations74
US6867473B2Mar 15, 2005

Plating a conductive material on a dielectric material

INTEL CORP6 citations73
US6682989B1Jan 27, 2004

Plating a conductive material on a dielectric material

INTEL CORP12 citations73
US7071125B2Jul 4, 2006

Precursors for film formation

INTEL CORP8 citations71
US6908717B2Jun 21, 2005

Positive photosensitive resin composition, process for its preparation, and semiconductor devices

INTEL CORP9 citations70
US7658975B2Feb 9, 2010

Sealing porous dielectric materials

INTEL CORP2 citations63
US7572732B2Aug 11, 2009

Method to modulate etch rate in SLAM

INTEL CORP2 citations63
US7563727B2Jul 21, 2009

Low-k dielectric layer formed from aluminosilicate precursors

INTEL CORP4 citations63
US7470450B2Dec 30, 2008

Forming a silicon nitride film

INTEL CORP3 citations63
US7439179B2Oct 21, 2008

Healing detrimental bonds in deposited materials

INTEL CORP2 citations63
US7180180B2Feb 20, 2007

Stacked device underfill and a method of fabrication

INTEL CORP2 citations63
US7138158B2Nov 21, 2006

Forming a dielectric layer using a hydrocarbon-containing precursor

INTEL CORP2 citations61
US7034399B2Apr 25, 2006

Forming a porous dielectric layer

INTEL CORP2 citations61
US7029723B2Apr 18, 2006

Forming chemical vapor depositable low dielectric constant layers

INTEL CORP3 citations61
US7560165B2Jul 14, 2009

Sealing porous dielectric materials

INTEL CORP2 citations59
US7585615B2Sep 8, 2009

Composite photoresist for modifying die-side bumps

INTEL CORP4 citations57
US7358597B2Apr 15, 2008

UV-activated dielectric layer

INTEL CORP0 citations52
US8003293B2Aug 23, 2011

Pixelated photoresists

INTEL CORP0 citations51
US7452728B2Nov 18, 2008

Metal ion separation from aqueous solutions using photoswitchable ionophores

INTEL CORP0 citations51
US7235344B2Jun 26, 2007

Energy harvesting molecules and photoresist technology

INTEL CORP0 citations49
US7790630B2Sep 7, 2010

Silicon-doped carbon dielectrics

INTEL CORP0 citations48
US7615337B2Nov 10, 2009

Photoactive resist capping layer

INTEL CORP0 citations45

UNIV COLORADO

1 patent

LI BO

1 patent

HONEYWELL INT INC

1 patent

MEAGLEY ROBERT P

1 patent

GOODNER MICHAEL D

1 patent