Inventor
GOODNER MICHAEL D
US50 patents
⚠️ This page may combine multiple inventors who share the name “GOODNER MICHAEL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
45 patentsUS6946384B2Sep 20, 2005
Stacked device underfill and a method of fabrication
INTEL CORP235 citations99
US6876017B2Apr 5, 2005
Polymer sacrificial light absorbing structure and method
INTEL CORP542 citations99
US6566280B1May 20, 2003
Forming polymer features on a substrate
INTEL CORP297 citations99
US7018918B2Mar 28, 2006
Method of forming a selectively converted inter-layer dielectric using a porogen material
INTEL CORP76 citations97
US7125582B2Oct 24, 2006
Low-temperature silicon nitride deposition
INTEL CORP57 citations96
US7071091B2Jul 4, 2006
Method of forming air gaps in a dielectric material using a sacrificial film
INTEL CORP50 citations96
US6737365B1May 18, 2004
Forming a porous dielectric layer
INTEL CORP61 citations95
US7303989B2Dec 4, 2007
Using zeolites to improve the mechanical strength of low-k interlayer dielectrics
INTEL CORP22 citations93
US7294568B2Nov 13, 2007
Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures
INTEL CORP22 citations93
US6924222B2Aug 2, 2005
Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide
INTEL CORP32 citations93
US6893985B2May 17, 2005
UV-activated dielectric layer
INTEL CORP40 citations93
US6858528B2Feb 22, 2005
Composite sacrificial material
INTEL CORP17 citations93
US7169715B2Jan 30, 2007
Forming a dielectric layer using porogens
INTEL CORP18 citations92
US6991893B2Jan 31, 2006
Controlling resist profiles through substrate modification
INTEL CORP20 citations92
US7241707B2Jul 10, 2007
Layered films formed by controlled phase segregation
INTEL CORP22 citations90
US7595555B2Sep 29, 2009
Method of forming air gaps in a dielectric material using a sacrificial film and resulting structures
INTEL CORP13 citations84
US7466025B2Dec 16, 2008
Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide
INTEL CORP12 citations84
US7365375B2Apr 29, 2008
Organic-framework zeolite interlayer dielectrics
INTEL CORP10 citations84
US7344972B2Mar 18, 2008
Photosensitive dielectric layer
INTEL CORP16 citations84
US7018920B2Mar 28, 2006
Composite sacrificial material
INTEL CORP12 citations84
US7732936B2Jun 8, 2010
Buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer
INTEL CORP6 citations74
US7157755B2Jan 2, 2007
Polymer sacrificial light absorbing structure and method
INTEL CORP7 citations74
US7101798B2Sep 5, 2006
Method to modulate etch rate in SLAM
INTEL CORP8 citations74
US7030040B2Apr 18, 2006
Selectively growing a polymeric material on a semiconductor substrate
INTEL CORP6 citations74
US6867473B2Mar 15, 2005
Plating a conductive material on a dielectric material
INTEL CORP6 citations73
US6682989B1Jan 27, 2004
Plating a conductive material on a dielectric material
INTEL CORP12 citations73
US7071125B2Jul 4, 2006
Precursors for film formation
INTEL CORP8 citations71
US6908717B2Jun 21, 2005
Positive photosensitive resin composition, process for its preparation, and semiconductor devices
INTEL CORP9 citations70
US7658975B2Feb 9, 2010
Sealing porous dielectric materials
INTEL CORP2 citations63
US7572732B2Aug 11, 2009
Method to modulate etch rate in SLAM
INTEL CORP2 citations63
US7563727B2Jul 21, 2009
Low-k dielectric layer formed from aluminosilicate precursors
INTEL CORP4 citations63
US7470450B2Dec 30, 2008
Forming a silicon nitride film
INTEL CORP3 citations63
US7439179B2Oct 21, 2008
Healing detrimental bonds in deposited materials
INTEL CORP2 citations63
US7180180B2Feb 20, 2007
Stacked device underfill and a method of fabrication
INTEL CORP2 citations63
US7138158B2Nov 21, 2006
Forming a dielectric layer using a hydrocarbon-containing precursor
INTEL CORP2 citations61
US7034399B2Apr 25, 2006
Forming a porous dielectric layer
INTEL CORP2 citations61
US7029723B2Apr 18, 2006
Forming chemical vapor depositable low dielectric constant layers
INTEL CORP3 citations61
US7560165B2Jul 14, 2009
Sealing porous dielectric materials
INTEL CORP2 citations59
US7585615B2Sep 8, 2009
Composite photoresist for modifying die-side bumps
INTEL CORP4 citations57
US7358597B2Apr 15, 2008
UV-activated dielectric layer
INTEL CORP0 citations52
US8003293B2Aug 23, 2011
Pixelated photoresists
INTEL CORP0 citations51
US7452728B2Nov 18, 2008
Metal ion separation from aqueous solutions using photoswitchable ionophores
INTEL CORP0 citations51
US7235344B2Jun 26, 2007
Energy harvesting molecules and photoresist technology
INTEL CORP0 citations49
US7790630B2Sep 7, 2010
Silicon-doped carbon dielectrics
INTEL CORP0 citations48
US7615337B2Nov 10, 2009
Photoactive resist capping layer
INTEL CORP0 citations45