Inventor

ELPELT RUDOLF

DE39 patents

⚠️ This page may combine multiple inventors who share the name “ELPELT RUDOLF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ELPELT RUDOLF

INFINEON TECHNOLOGIES AG

SiC trench transistor device and methods of manufacturing thereof

Shielding structure for SiC devices

Semiconductor device including a super junction structure in a SiC semiconductor body

Silicon carbide device with an implantation tail compensation region

Silicon carbide device with trench gate

Power transistor with integrated Schottky diode

Silicon carbide device with trench gate structure and method of manufacturing

Silicon carbide field-effect transistor including shielding areas

Silicon carbide field-effect transistor including shielding areas

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

Silicon carbide device and a method for forming a silicon carbide device

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

Silicon carbide semiconductor component with edge termination structure

SiC device and methods of manufacturing thereof

Semiconductor device with junction termination zone

Silicon carbide device with a stripe-shaped trench gate structure

Method of producing a silicon carbide device with a trench gate

Silicon carbide device with Schottky contact

Semiconductor device including current spread region

Semiconductor device including current spread region

Silicon carbide semiconductor component

SiC device with buried doped region

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

Semiconductor device including a super junction structure in a SiC semiconductor body

SiC devices with shielding structure

Semiconductor device with termination structure including field zones and method of manufacturing

Silicon carbide device and a method for forming a silicon carbide device

Silicon carbide device and a method for manufacturing a silicon carbide device

Silicon carbide device and a method for manufacturing a silicon carbide device

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with structured current spread region and method

Method for making an integrated circuit including vertical junction field effect transistors

Semiconductor device and method for forming same

SICED ELECT DEV GMBH & CO KG

Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

Semiconductor structure with a switch element and an edge element

ELPELT RUDOLF

Production method for a unipolar semiconductor component and semiconductor device

Semiconductor device including a channel stop zone

KUECK DANIEL

Semiconductor device

PETERS DETHARD

Transistor component having a shielding structure

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device