Inventor
NAKANO KAZUSHI
JP19 patents
⚠️ This page may combine multiple inventors who share the name “NAKANO KAZUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
16 patentsUS5515393AMay 7, 1996
Semiconductor laser with ZnMgSSe cladding layers
SONY CORP105 citations96
US7144793B2Dec 5, 2006
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
SONY CORP37 citations92
US5898662AApr 27, 1999
Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
SONY CORP9 citations74
US5828086AOct 27, 1998
Semiconductor light emitting device with a Mg superlattice structure
SONY CORP8 citations74
US5665977ASep 9, 1997
Semiconductor light emitting device with defect decomposing and blocking layers
SONY CORP14 citations74
US5633514AMay 27, 1997
Semiconductor light emitting device with lattice-matching and lattice-mismatching
SONY CORP7 citations74
US6031244AFeb 29, 2000
Luminescent semiconductor device with antidiffusion layer on active layer surface
SONY CORP11 citations73
US5657336AAug 12, 1997
Semiconductor light-emitting device
SONY CORP8 citations72
US6972246B2Dec 6, 2005
Method for manufacturing an oriented crystalline semiconductor using a pulsed laser
SONY CORP7 citations71
US5567960AOct 22, 1996
II/VI-compound semiconductor light emitting device
SONY CORP6 citations71
US5872023AFeb 16, 1999
Method of fabricating of light emitting device with controlled lattice mismatch
SONY CORP4 citations63
US7169690B2Jan 30, 2007
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
SONY CORP3 citations62
US5740193AApr 14, 1998
Semiconductor light-emitting device
SONY CORP3 citations61
US7189665B2Mar 13, 2007
Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
SONY CORP4 citations60
US5766345AJun 16, 1998
Epitaxial growth method of semiconductor
SONY CORP4 citations58
US7538014B2May 26, 2009
Method of producing crystalline semiconductor material and method of fabricating semiconductor device
SONY CORP0 citations52