P

Inventor

LIU HSING-CHAO

TW19 patents
⚠️ This page may combine multiple inventors who share the name “LIU HSING-CHAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VANGUARD INT SEMICONDUCT CORP

15 patents
US9343572B1May 17, 2016

High-voltage semiconductor device and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP10 citations81
US10276679B2Apr 30, 2019

Semiconductor device and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP10 citations80
US9972534B1May 15, 2018

Semiconductor devices, through-substrate via structures and methods for forming the same

VANGUARD INT SEMICONDUCT CORP4 citations70
US9799601B1Oct 24, 2017

Fuse elements and methods for forming the same

VANGUARD INT SEMICONDUCT CORP5 citations69
US12513924B2Dec 30, 2025

Semiconductor device

VANGUARD INT SEMICONDUCT CORP0 citations61
US10615249B2Apr 7, 2020

Capacitor structures and methods for fabricating the same

VANGUARD INT SEMICONDUCT CORP1 citations61
US7745343B1Jun 29, 2010

Method for fabricating semiconductor device with fuse element

VANGUARD INT SEMICONDUCT CORP2 citations57
US9978861B2May 22, 2018

Semiconductor device having gate in trenches

VANGUARD INT SEMICONDUCT CORP1 citations51
US11393921B2Jul 19, 2022

High-voltage semiconductor device

VANGUARD INT SEMICONDUCT CORP0 citations48
US9525020B2Dec 20, 2016

Semiconductor device and method for forming the same

VANGUARD INT SEMICONDUCT CORP1 citations47
US11973021B2Apr 30, 2024

Semiconductor device and method forming the same

VANGUARD INT SEMICONDUCT CORP0 citations45
US11742389B2Aug 29, 2023

Semiconductor structure and method for forming the same

VANGUARD INT SEMICONDUCT CORP0 citations45
US12532537B2Jan 20, 2026

Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof

VANGUARD INT SEMICONDUCT CORP0 citations44
US10629726B2Apr 21, 2020

High-voltage semiconductor device and method for manufacturing the same

VANGUARD INT SEMICONDUCT CORP0 citations39
US10276563B2Apr 30, 2019

Semiconductor devices and methods for forming the same

VANGUARD INT SEMICONDUCT CORP0 citations37

(unassigned)

1 patent

LIU HSING CHAO

1 patent

LO WEN-SHUN

1 patent

LO WEN-HSUN

1 patent