Inventor
LIU HSING-CHAO
TW19 patents
⚠️ This page may combine multiple inventors who share the name “LIU HSING-CHAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
15 patentsUS9343572B1May 17, 2016
High-voltage semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP10 citations81
US10276679B2Apr 30, 2019
Semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP10 citations80
US9972534B1May 15, 2018
Semiconductor devices, through-substrate via structures and methods for forming the same
VANGUARD INT SEMICONDUCT CORP4 citations70
US9799601B1Oct 24, 2017
Fuse elements and methods for forming the same
VANGUARD INT SEMICONDUCT CORP5 citations69
US12513924B2Dec 30, 2025
Semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations61
US10615249B2Apr 7, 2020
Capacitor structures and methods for fabricating the same
VANGUARD INT SEMICONDUCT CORP1 citations61
US7745343B1Jun 29, 2010
Method for fabricating semiconductor device with fuse element
VANGUARD INT SEMICONDUCT CORP2 citations57
US9978861B2May 22, 2018
Semiconductor device having gate in trenches
VANGUARD INT SEMICONDUCT CORP1 citations51
US11393921B2Jul 19, 2022
High-voltage semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations48
US9525020B2Dec 20, 2016
Semiconductor device and method for forming the same
VANGUARD INT SEMICONDUCT CORP1 citations47
US11973021B2Apr 30, 2024
Semiconductor device and method forming the same
VANGUARD INT SEMICONDUCT CORP0 citations45
US11742389B2Aug 29, 2023
Semiconductor structure and method for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations45
US12532537B2Jan 20, 2026
Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations44
US10629726B2Apr 21, 2020
High-voltage semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP0 citations39
US10276563B2Apr 30, 2019
Semiconductor devices and methods for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations37