Inventor
RUEB MICHAEL
AT30 patents
⚠️ This page may combine multiple inventors who share the name “RUEB MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS6960798B2Nov 1, 2005
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG25 citations92
US6894329B2May 17, 2005
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG15 citations92
US6828609B2Dec 7, 2004
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG41 citations92
US6649459B2Nov 18, 2003
Method for manufacturing a semiconductor component
INFINEON TECHNOLOGIES AG38 citations92
US7576410B2Aug 18, 2009
Power transistor
INFINEON TECHNOLOGIES AG17 citations84
US6825514B2Nov 30, 2004
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG15 citations84
US6819089B2Nov 16, 2004
Power factor correction circuit with high-voltage semiconductor component
INFINEON TECHNOLOGIES AG19 citations84
US7132726B2Nov 7, 2006
Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric
INFINEON TECHNOLOGIES AG6 citations62
US7091115B2Aug 15, 2006
Method for doping a semiconductor body
INFINEON TECHNOLOGIES AG0 citations52
US7687843B2Mar 30, 2010
Process for patterning capacitor structures in semiconductor trenches
INFINEON TECHNOLOGIES AG0 citations42
INFINEON TECHNOLOGIES AUSTRIA
8 patentsUS7459365B2Dec 2, 2008
Method for fabricating a semiconductor component
INFINEON TECHNOLOGIES AUSTRIA29 citations92
US7973362B2Jul 5, 2011
Semiconductor component and method for producing it
INFINEON TECHNOLOGIES AUSTRIA11 citations84
US9312346B2Apr 12, 2016
Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA2 citations63
US8343834B2Jan 1, 2013
Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
INFINEON TECHNOLOGIES AUSTRIA2 citations63
US7868396B2Jan 11, 2011
Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone
INFINEON TECHNOLOGIES AUSTRIA3 citations63
US7745273B2Jun 29, 2010
Semiconductor device and method for forming same
INFINEON TECHNOLOGIES AUSTRIA5 citations63
US7821064B2Oct 26, 2010
Lateral MISFET and method for fabricating it
INFINEON TECHNOLOGIES AUSTRIA2 citations62
US9117874B2Aug 25, 2015
Method for fabricating a trench structure, and a semiconductor arrangement comprising a trench structure
INFINEON TECHNOLOGIES AUSTRIA0 citations52