Inventor
DENIZ DERYA
US17 patents
⚠️ This page may combine multiple inventors who share the name “DENIZ DERYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QORVO US INC
9 patentsUS12365979B2Jul 22, 2025
Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
QORVO US INC1 citations73
US11824511B2Nov 21, 2023
Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
QORVO US INC2 citations72
US12597902B2Apr 7, 2026
Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
QORVO US INC0 citations62
US11381212B2Jul 5, 2022
Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
QORVO US INC0 citations62
US12031949B2Jul 9, 2024
Preventing epoxy bleed-out for biosensor devices
QORVO US INC0 citations61
US11885007B2Jan 30, 2024
Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
QORVO US INC0 citations61
US11401601B2Aug 2, 2022
Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
QORVO US INC0 citations61
US12388407B2Aug 12, 2025
Method for manufacturing acoustic devices with improved performance
QORVO US INC0 citations59
US11990885B2May 21, 2024
Method for manufacturing acoustic devices with improved performance
QORVO US INC1 citations59
GLOBALFOUNDRIES INC
6 patentsUS8889500B1Nov 18, 2014
Methods of forming stressed fin channel structures for FinFET semiconductor devices
GLOBALFOUNDRIES INC28 citations92
US8975142B2Mar 10, 2015
FinFET channel stress using tungsten contacts in raised epitaxial source and drain
GLOBALFOUNDRIES INC14 citations83
US8912057B1Dec 16, 2014
Fabrication of nickel free silicide for semiconductor contact metallization
GLOBALFOUNDRIES INC5 citations72
US9583397B1Feb 28, 2017
Source/drain terminal contact and method of forming same
GLOBALFOUNDRIES INC5 citations68
US9076787B2Jul 7, 2015
Fabrication of nickel free silicide for semiconductor contact metallization
GLOBALFOUNDRIES INC0 citations51
US9117930B2Aug 25, 2015
Methods of forming stressed fin channel structures for FinFET semiconductor devices
GLOBALFOUNDRIES INC0 citations41