Inventor

ZHU BAOFU

SG20 patents

⚠️ This page may combine multiple inventors who share the name “ZHU BAOFU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHU BAOFU

GLOBALFOUNDRIES US INC

Transistors with separately-formed source and drain

Asymmetric source drain structures

Transistors with separately-formed source and drain

N-well resistor

Dual trench isolation structures

Transistors with a hybrid source or drain

Epitaxial semiconductor material regions for transistor devices and methods of forming same

Transistors with an asymmetrical source and drain

Epitaxial semiconductor material regions for transistor devices and methods of forming same

Source/drain regions for transistor devices and methods of forming same

GLOBALFOUNDRIES INC

Semiconductor device having controlled final metal critical dimension

Sub-fin doping method

Device with diffusion blocking layer in source/drain region

Device with diffusion blocking layer in source/drain region

High-voltage and analog bipolar devices

STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method

FinFET device and method of manufacturing

GLOBALFOUNDRIES SG PTE LTD

High voltage device

Method of forming a high voltage device

ZHANG GUOWEI

High voltage device