P

Inventor

NEUMAYER DEBORAH A

US50 patents
⚠️ This page may combine multiple inventors who share the name “NEUMAYER DEBORAH A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

33 patents
US7491658B2Feb 17, 2009

Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality

IBM63 citations98
US6982230B2Jan 3, 2006

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

IBM112 citations98
US6888714B2May 3, 2005

Tuneable ferroelectric decoupling capacitor

IBM106 citations97
US7479306B2Jan 20, 2009

SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same

IBM26 citations92
US6507476B1Jan 14, 2003

Tuneable ferroelectric decoupling capacitor

IBM17 citations92
US7915180B2Mar 29, 2011

SiCOH film preparation using precursors with built-in porogen functionality

IBM8 citations84
US7892648B2Feb 22, 2011

SiCOH dielectric material with improved toughness and improved Si-C bonding

IBM8 citations84
US7674521B2Mar 9, 2010

Materials containing voids with void size controlled on the nanometer scale

IBM9 citations84
US7521377B2Apr 21, 2009

SiCOH film preparation using precursors with built-in porogen functionality

IBM11 citations84
US9515252B1Dec 6, 2016

Low degradation MRAM encapsulation process using silicon-rich silicon nitride film

IBM13 citations83
US6541331B2Apr 1, 2003

Method of manufacturing high dielectric constant material

IBM12 citations74
US10541151B1Jan 21, 2020

Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication

IBM2 citations73
US9984940B1May 29, 2018

Selective and conformal passivation layer for 3D high-mobility channel devices

IBM6 citations73
US9698043B1Jul 4, 2017

Shallow trench isolation for semiconductor devices

IBM5 citations73
US9881793B2Jan 30, 2018

Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterning

IBM2 citations72
US9679775B2Jun 13, 2017

Selective dopant junction for a group III-V semiconductor device

IBM2 citations72
US9418846B1Aug 16, 2016

Selective dopant junction for a group III-V semiconductor device

IBM4 citations72
US6984415B2Jan 10, 2006

Delivery systems for gases for gases via the sublimation of solid precursors

IBM7 citations71
US8373271B2Feb 12, 2013

Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication

IBM4 citations63
US11168234B2Nov 9, 2021

Enhanced adhesive materials and processes for 3D applications

IBM0 citations62
US10727114B2Jul 28, 2020

Interconnect structure including airgaps and substractively etched metal lines

IBM1 citations62
US9293557B2Mar 22, 2016

Low temperature spacer for advanced semiconductor devices

IBM2 citations62
US10684246B2Jun 16, 2020

On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling

IBM0 citations52
US10585060B2Mar 10, 2020

On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling

IBM0 citations52
US9691972B1Jun 27, 2017

Low temperature encapsulation for magnetic tunnel junction

IBM1 citations52
US9484403B2Nov 1, 2016

Boron rich nitride cap for total ionizing dose mitigation in SOI devices

IBM0 citations52
US9231063B2Jan 5, 2016

Boron rich nitride cap for total ionizing dose mitigation in SOI devices

IBM0 citations52
US9112068B2Aug 18, 2015

Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation

IBM0 citations52
US7566938B2Jul 28, 2009

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

IBM0 citations52
US6653246B2Nov 25, 2003

High dielectric constant materials

IBM1 citations52
US11220742B2Jan 11, 2022

Low temperature lift-off patterning for glassy carbon films

IBM0 citations51
US9698339B1Jul 4, 2017

Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material

IBM1 citations51
US9590054B2Mar 7, 2017

Low temperature spacer for advanced semiconductor devices

IBM0 citations51

LIN QINGHUANG

4 patents

BONILLA GRISELDA

2 patents

GATES STEPHEN M

2 patents

COTTE JOHN M

2 patents

SAMSUNG ELECTRONICS CO LTD

1 patent

EDELSTEIN DANIEL C

1 patent

ASSEFA SOLOMON

1 patent

AVOURIS PHAEDON

1 patent

DIMITRAKOPOULOS CHRISTOS D

1 patent

NGUYEN SON VAN

1 patent

GLOBALFOUNDRIES INC

1 patent