Inventor
HAMADA TATSUFUMI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “HAMADA TATSUFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KIOXIA CORP
11 patentsUS11282853B2Mar 22, 2022
Semiconductor memory device
KIOXIA CORP3 citations69
US11950414B2Apr 2, 2024
Memory device
KIOXIA CORP0 citations59
US11587942B2Feb 21, 2023
Semiconductor memory device
KIOXIA CORP0 citations59
US12464722B2Nov 4, 2025
Three-dimensional type NAND memory device
KIOXIA CORP0 citations58
US11791279B2Oct 17, 2023
Semiconductor device with hybrid channel
KIOXIA CORP0 citations50
US12543309B2Feb 3, 2026
Semiconductor storage device and method of manufacturing semiconductor storage device
KIOXIA CORP0 citations49
US12274059B2Apr 8, 2025
Semiconductor storage device and method of manufacturing semiconductor storage device
KIOXIA CORP0 citations49
US12041778B2Jul 16, 2024
Semiconductor storage device and method for manufacturing semiconductor storage device
KIOXIA CORP0 citations49
US11854971B2Dec 26, 2023
Semiconductor storage device and manufacturing method thereof
KIOXIA CORP0 citations49
US11296111B2Apr 5, 2022
Semiconductor memory device and manufacturing method of semiconductor memory device
KIOXIA CORP0 citations49
US12004349B2Jun 4, 2024
Semiconductor device and method for manufacturing the same
KIOXIA CORP0 citations46
TOSHIBA MEMORY CORP
5 patentsUS9991272B2Jun 5, 2018
Semiconductor memory device
TOSHIBA MEMORY CORP3 citations73
US9842856B2Dec 12, 2017
Semiconductor memory device and method of manufacturing the same
TOSHIBA MEMORY CORP3 citations72
US10276590B2Apr 30, 2019
Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layer
TOSHIBA MEMORY CORP3 citations71
US11158649B2Oct 26, 2021
Semiconductor storage device with columnar body having impurity containing channel film
TOSHIBA MEMORY CORP0 citations61
US9917099B2Mar 13, 2018
Semiconductor device having vertical channel between stacked electrode layers and insulating layers
TOSHIBA MEMORY CORP0 citations51
TOKYO ELECTRON LTD
2 patentsUS9245847B2Jan 26, 2016
Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed
TOKYO ELECTRON LTD1 citations51
US9240379B2Jan 19, 2016
Semiconductor device manufacturing method for suppresing wiring material from being diffused into insulating film, storage medium and semiconductor device
TOKYO ELECTRON LTD0 citations51