Inventor
KONNO TAICHIROO
JP26 patents
⚠️ This page may combine multiple inventors who share the name “KONNO TAICHIROO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI CABLE
14 patentsUS7692203B2Apr 6, 2010
Semiconductor light emitting device
HITACHI CABLE26 citations92
US7675072B2Mar 9, 2010
Light emitting diode
HITACHI CABLE9 citations84
US7652281B2Jan 26, 2010
Light emitting diode
HITACHI CABLE12 citations84
US7564071B2Jul 21, 2009
Semiconductor light emitting device
HITACHI CABLE17 citations84
US7449722B2Nov 11, 2008
Semiconductor light emitting element
HITACHI CABLE7 citations74
US7569866B2Aug 4, 2009
Semiconductor light-emitting device
HITACHI CABLE7 citations73
US7723731B2May 25, 2010
Semiconductor light emitting device
HITACHI CABLE3 citations63
US8829489B2Sep 9, 2014
Nitride semiconductor template and light-emitting diode
HITACHI CABLE2 citations62
US8350277B2Jan 8, 2013
Light emitting element
HITACHI CABLE4 citations62
US7608859B2Oct 27, 2009
Semiconductor light-emitting device with transparent conductive film
HITACHI CABLE3 citations62
US7368759B2May 6, 2008
Semiconductor light-emitting device
HITACHI CABLE6 citations62
US7230281B2Jun 12, 2007
Semiconductor light emitting device
HITACHI CABLE2 citations62
US9359692B2Jun 7, 2016
Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template
HITACHI CABLE0 citations52
US7535026B2May 19, 2009
Semiconductor light-emitting device with high brightness and low operating voltage
HITACHI CABLE0 citations41
KONNO TAICHIROO
6 patentsUS8664663B2Mar 4, 2014
Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layer
KONNO TAICHIROO7 citations83
US8258529B2Sep 4, 2012
Light-emitting element and method of making the same
KONNO TAICHIROO8 citations82
US8212268B2Jul 3, 2012
Epitaxial wafer, light-emitting element, method of fabricating epitaxial wafer and method of fabricating light-emitting element
KONNO TAICHIROO5 citations61
US8120050B2Feb 21, 2012
Light-emitting element
KONNO TAICHIROO2 citations59
US9236252B2Jan 12, 2016
Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
KONNO TAICHIROO0 citations50
US8796711B2Aug 5, 2014
Light-emitting element
KONNO TAICHIROO0 citations40
SUMITOMO CHEMICAL CO
2 patentsUS10060047B2Aug 28, 2018
Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate
SUMITOMO CHEMICAL CO0 citations52
US10418241B2Sep 17, 2019
Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
SUMITOMO CHEMICAL CO0 citations51
FUJIKURA HAJIME
2 patentsUS8786052B2Jul 22, 2014
Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate
FUJIKURA HAJIME0 citations51
US9105755B2Aug 11, 2015
Method of manufacturing a nitride semiconductor epitaxial substrate
FUJIKURA HAJIME1 citations50