Inventor

HSIAO WEN-CHU

TW23 patents

⚠️ This page may combine multiple inventors who share the name “HSIAO WEN-CHU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSIAO WEN-CHU

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor structure with blocking layer and method for forming the same

Method of fabricating a semiconductor device structure

Method of forming a contact structure for a FinFET semiconductor device

Semiconductor device and manufacturing method thereof

Fin field-effect transistor device and method of forming the same

Contact structure for FinFET semiconductor device

Method for increasing germanium concentration of FIN and resulting semiconductor device

Semiconductor device and manufacturing method thereof

Fin field-effect transistor device and method of forming the same

Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devices

Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices

Semiconductor structure with blocking layer

Fin field-effect transistor device and method of forming the same

Source and drain epitaxy re-shaping

Semiconductor device

Surface tension modification using silane with hydrophobic functional group for thin film deposition

Semiconductor devices utilizing partially doped stressor film portions

HSIAO WEN CHU

Method of manufacturing semiconductor device

Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same

TAIWAN SEMICONDUCTOR MFG

Semiconductor device

Dual damascene metal gate

UNIV NAT CENTRAL

Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer

CHONG LAI WAN

Surface tension modification using silane with hydrophobic functional group for thin film deposition